Bonding character of the boron-doped C60 films prepared by radio frequency plasma assisted vapor deposition
Boron-doped C60 thin films were synthesized firstly by a radio frequency plasma assisted vapor deposition technique using C60 as a precursor. The surface morphology of the samples was observed by atomic force microscopy, and their chemical bonding characters were investigated by x-ray photoelectron...
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| Veröffentlicht in: | Journal of materials science 2002-03, Vol.37 (5), p.1043-1047 |
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| container_title | Journal of materials science |
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| creator | ZOU, Y. J ZHANG, X. W LI, Y. L WANG, B YAN, H CUI, J. Z LIU, L. M DA, D. A |
| description | Boron-doped C60 thin films were synthesized firstly by a radio frequency plasma assisted vapor deposition technique using C60 as a precursor. The surface morphology of the samples was observed by atomic force microscopy, and their chemical bonding characters were investigated by x-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy. The results show that the boron atoms are incorporated into the fullerene molecules in the samples, and the boron heterofullerene C60−nBn was synthesized. Plasma polymerized C60 molecules were also found in the samples besides the boron heterofullerene. The effects of radio frequency power and the substrate position on the growth of the B-doped C60 films were studied. The results indicate that the higher energies and densities of the reactive radicals in the plasma are favorable for the formation of the boron heterofullerene C60−nBn or polymerized C60 molecules. |
| doi_str_mv | 10.1023/A:1014368418784 |
| format | Article |
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J ; ZHANG, X. W ; LI, Y. L ; WANG, B ; YAN, H ; CUI, J. Z ; LIU, L. M ; DA, D. A</creator><creatorcontrib>ZOU, Y. J ; ZHANG, X. W ; LI, Y. L ; WANG, B ; YAN, H ; CUI, J. Z ; LIU, L. M ; DA, D. A</creatorcontrib><description>Boron-doped C60 thin films were synthesized firstly by a radio frequency plasma assisted vapor deposition technique using C60 as a precursor. The surface morphology of the samples was observed by atomic force microscopy, and their chemical bonding characters were investigated by x-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy. The results show that the boron atoms are incorporated into the fullerene molecules in the samples, and the boron heterofullerene C60−nBn was synthesized. Plasma polymerized C60 molecules were also found in the samples besides the boron heterofullerene. The effects of radio frequency power and the substrate position on the growth of the B-doped C60 films were studied. The results indicate that the higher energies and densities of the reactive radicals in the plasma are favorable for the formation of the boron heterofullerene C60−nBn or polymerized C60 molecules.</description><identifier>ISSN: 0022-2461</identifier><identifier>EISSN: 1573-4803</identifier><identifier>DOI: 10.1023/A:1014368418784</identifier><identifier>CODEN: JMTSAS</identifier><language>eng</language><publisher>Heidelberg: Springer</publisher><subject>Atomic force microscopy ; Boron ; Buckminsterfullerene ; Chemical bonds ; Chemical synthesis ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Defects and impurities: doping, implantation, distribution, concentration, etc ; Exact sciences and technology ; Fourier transforms ; Fullerenes ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Morphology ; Organic chemistry ; Photoelectrons ; Physics ; Polymerization ; Radio frequency ; Radio frequency plasma ; Spectrum analysis ; Structure and morphology; thickness ; Substrates ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology ; Thin films ; Vapor deposition ; Vapor phase epitaxy; growth from vapor phase ; X ray photoelectron spectroscopy</subject><ispartof>Journal of materials science, 2002-03, Vol.37 (5), p.1043-1047</ispartof><rights>2002 INIST-CNRS</rights><rights>Journal of Materials Science is a copyright of Springer, (2002). 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The results indicate that the higher energies and densities of the reactive radicals in the plasma are favorable for the formation of the boron heterofullerene C60−nBn or polymerized C60 molecules.</description><subject>Atomic force microscopy</subject><subject>Boron</subject><subject>Buckminsterfullerene</subject><subject>Chemical bonds</subject><subject>Chemical synthesis</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Defects and impurities: doping, implantation, distribution, concentration, etc</subject><subject>Exact sciences and technology</subject><subject>Fourier transforms</subject><subject>Fullerenes</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Morphology</subject><subject>Organic chemistry</subject><subject>Photoelectrons</subject><subject>Physics</subject><subject>Polymerization</subject><subject>Radio frequency</subject><subject>Radio frequency plasma</subject><subject>Spectrum analysis</subject><subject>Structure and morphology; thickness</subject><subject>Substrates</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><subject>Thin films</subject><subject>Vapor deposition</subject><subject>Vapor phase epitaxy; growth from vapor phase</subject><subject>X ray photoelectron spectroscopy</subject><issn>0022-2461</issn><issn>1573-4803</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNpdzs1LwzAYBvAgCs7p2WtA9FZ9k7RJ520Ov2DgRc_lbT5cZtvEpBP231twJ08PPPx4eAi5ZHDLgIu75T0DVgpZl6xWdXlEZqxSoihrEMdkBsB5wUvJTslZzlsAqBRnM_L1EAbjh0-qN5hQjzbR4Oi4sbQNKQyFCdEaupJAne_6TGOyEdNUtXua0PhAXbLfOzvoPY0d5h4p5uzzOJEfjCFRY2PIfvRhOCcnDrtsLw45Jx9Pj--rl2L99vy6Wq4LzUGMhVQoldZWLFhVK8VUi9WidUZADUrbyrXGMMFsiwq1kFw4xwzIFqSrhVxIMSc3f7sxhelaHpveZ227DgcbdrnhCiRUUE7w6h_chl0apm8N5xIYF7Lkk7o-KMwaO5dw0D43Mfke075hopoU5-IXm510xA</recordid><startdate>20020301</startdate><enddate>20020301</enddate><creator>ZOU, Y. 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The results show that the boron atoms are incorporated into the fullerene molecules in the samples, and the boron heterofullerene C60−nBn was synthesized. Plasma polymerized C60 molecules were also found in the samples besides the boron heterofullerene. The effects of radio frequency power and the substrate position on the growth of the B-doped C60 films were studied. The results indicate that the higher energies and densities of the reactive radicals in the plasma are favorable for the formation of the boron heterofullerene C60−nBn or polymerized C60 molecules.</abstract><cop>Heidelberg</cop><pub>Springer</pub><doi>10.1023/A:1014368418784</doi><tpages>5</tpages></addata></record> |
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| subjects | Atomic force microscopy Boron Buckminsterfullerene Chemical bonds Chemical synthesis Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Defects and impurities: doping, implantation, distribution, concentration, etc Exact sciences and technology Fourier transforms Fullerenes Materials science Methods of deposition of films and coatings film growth and epitaxy Morphology Organic chemistry Photoelectrons Physics Polymerization Radio frequency Radio frequency plasma Spectrum analysis Structure and morphology thickness Substrates Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Thin films Vapor deposition Vapor phase epitaxy growth from vapor phase X ray photoelectron spectroscopy |
| title | Bonding character of the boron-doped C60 films prepared by radio frequency plasma assisted vapor deposition |
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