The interaction of metals and barrier layers with fluorinated silicon oxides

The interaction of metals and barrier layers with fluorinated silicon oxides

Fluorinated silicon oxide (FSG) films with varying fluorine (F) content were prepared by plasma-enhanced chemical vapor deposition (PECVD) using TEOS, O 2, and either C 2F 6 or NF 3. Metal films (Al, Cu–1% Al, Cu) were deposited on the FSG either directly or with a barrier layer (Ta, TaN) between th...

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Veröffentlicht in:Solid-state electronics 1999, Vol.43 (6), p.1019-1023
Hauptverfasser: Kim, Sarah E., Steinbrüchel, Christoph
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Steinbrüchel, Christoph
description Fluorinated silicon oxide (FSG) films with varying fluorine (F) content were prepared by plasma-enhanced chemical vapor deposition (PECVD) using TEOS, O 2, and either C 2F 6 or NF 3. Metal films (Al, Cu–1% Al, Cu) were deposited on the FSG either directly or with a barrier layer (Ta, TaN) between the metal and the FSG. In addition, undoped PECVD SiO 2 was studied as a capping layer on the FSG. Compositional depth profiles were obtained with both XPS and nuclear reaction analysis (NRA). F diffused rapidly through Ta, TaN and Al, and reacted with Al on the top surface. On the other hand, regardless of barrier layers, Cu showed almost no reaction with F. F diffusion was also observed through PECVD SiO 2.
doi_str_mv 10.1016/S0038-1101(99)00018-0
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title The interaction of metals and barrier layers with fluorinated silicon oxides
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