BAND OFFSETS AND PROPERTIES OF AlGaAs/GaAs AND AlGaN/GaN MATERIAL SYSTEMS
Authors calculated band offsets of AlGaAs/GaAs and AlGaN/GaN systems using the recently reformulated tight binding method. The valence band offset (VBO) of the Al0.2Ga0.8As/GaAs system was obtained as 0.03 eV in agreement with the experimental value of 0.03 eV. The VBO for AlxGa1-xN/GaN is predicted...
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| Veröffentlicht in: | Japanese Journal of Applied Physics, Part 1 Part 1, 2002-01, Vol.31 (5), p.247-252 |
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| container_title | Japanese Journal of Applied Physics, Part 1 |
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| creator | Ekpunobi, A J Animalu A, O E |
| description | Authors calculated band offsets of AlGaAs/GaAs and AlGaN/GaN systems using the recently reformulated tight binding method. The valence band offset (VBO) of the Al0.2Ga0.8As/GaAs system was obtained as 0.03 eV in agreement with the experimental value of 0.03 eV. The VBO for AlxGa1-xN/GaN is predicted as 0.3 x eV. The engineering of the band offsets has enabled authors to infer that the VBO of AlGaAs/GaAs solar cells increases with the bandgap of the window, hence the spectral response extends to higher photon energies. Also, the conduction band offset of AlGaN/GaN takes most of the band offset, making the material suitable for n-channel electronic devices. 10 refs. |
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The valence band offset (VBO) of the Al0.2Ga0.8As/GaAs system was obtained as 0.03 eV in agreement with the experimental value of 0.03 eV. The VBO for AlxGa1-xN/GaN is predicted as 0.3 x eV. The engineering of the band offsets has enabled authors to infer that the VBO of AlGaAs/GaAs solar cells increases with the bandgap of the window, hence the spectral response extends to higher photon energies. 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The valence band offset (VBO) of the Al0.2Ga0.8As/GaAs system was obtained as 0.03 eV in agreement with the experimental value of 0.03 eV. The VBO for AlxGa1-xN/GaN is predicted as 0.3 x eV. The engineering of the band offsets has enabled authors to infer that the VBO of AlGaAs/GaAs solar cells increases with the bandgap of the window, hence the spectral response extends to higher photon energies. Also, the conduction band offset of AlGaN/GaN takes most of the band offset, making the material suitable for n-channel electronic devices. 10 refs.</abstract></addata></record> |
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| ispartof | Japanese Journal of Applied Physics, Part 1, 2002-01, Vol.31 (5), p.247-252 |
| issn | 0021-4922 |
| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | BAND OFFSETS AND PROPERTIES OF AlGaAs/GaAs AND AlGaN/GaN MATERIAL SYSTEMS |
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