Native oxides on AlGaAs epilayer

The technological process to achieve high quality oxides on GaAs and AlGaAs is more difficult than to achieve native oxides on silicon due to the lack of stable oxides on GaAs and related compounds. This paper presents technological conditions to a grow large area of native oxides on AlGaAs epilayer...

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Veröffentlicht in:	Thin solid films 1999-01, Vol.338 (1), p.46-48
Hauptverfasser:	Ghita, R.V, Vasile, E, Cengher, D
Format:	Artikel
Sprache:	eng
Schlagworte:	Cross-disciplinary physics: materials science rheology Electron microscopy Exact sciences and technology Gallium arsenide Heat treatment Liquid phase epitaxy deposition from liquid phases (melts, solutions, and surface layers on liquids) Materials science Methods of deposition of films and coatings film growth and epitaxy Oxidation Physics
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