Native oxides on AlGaAs epilayer
The technological process to achieve high quality oxides on GaAs and AlGaAs is more difficult than to achieve native oxides on silicon due to the lack of stable oxides on GaAs and related compounds. This paper presents technological conditions to a grow large area of native oxides on AlGaAs epilayer...
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| Veröffentlicht in: | Thin solid films 1999-01, Vol.338 (1), p.46-48 |
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| container_title | Thin solid films |
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| creator | Ghita, R.V Vasile, E Cengher, D |
| description | The technological process to achieve high quality oxides on GaAs and AlGaAs is more difficult than to achieve native oxides on silicon due to the lack of stable oxides on GaAs and related compounds. This paper presents technological conditions to a grow large area of native oxides on AlGaAs epilayers, to be used in laser diodes technology. Experimental results from scanning electron microscopy (SEM) and electron dispersion spectroscopy (EDS) measurements reveals the presence of two native oxides forms, namely GaAsO and AlGaAsO on a 430-μm
2 surface (twice as large a lateral growth than found in the literature).The proposed oxides structures are Ga
0.5As
0.5O and Al
0.1Ga
0.4As
0.5O
2. These oxide forms have dielectric behaviour on an AlGaAs epilayer. |
| doi_str_mv | 10.1016/S0040-6090(98)00973-0 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_27052319</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0040609098009730</els_id><sourcerecordid>27052319</sourcerecordid><originalsourceid>FETCH-LOGICAL-c367t-9610d1875471fd27c0a3c52c4da182e9299aa8076355c6a865f689664d2707d73</originalsourceid><addsrcrecordid>eNqFkE1LAzEYhIMoWKs_QdiDiB5W3ySbr5OUolUoelDPISTvQmS7W5Ntsf_ebSt69DSXZ2aYIeScwg0FKm9fASooJRi4MvoawChewgEZUa1MyRSnh2T0ixyTk5w_AIAyxkekeHZ9XGPRfcWAuejaYtLM3CQXuIyN22A6JUe1azKe_eiYvD_cv00fy_nL7Gk6mZeeS9WXRlIIQ6GoFK0DUx4c94L5KjiqGRpmjHMalORCeOm0FLXURspqYEEFxcfkcp-7TN3nCnNvFzF7bBrXYrfKdsAE49QMoNiDPnU5J6ztMsWFSxtLwW7_sLs_7HasNdru_rAw-C5-Clz2rqmTa33Mf2Ypjd7F3-0xHMauIyabfcTWY4gJfW9DF_8p-gYnSXCh</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27052319</pqid></control><display><type>article</type><title>Native oxides on AlGaAs epilayer</title><source>ScienceDirect Journals (5 years ago - present)</source><creator>Ghita, R.V ; Vasile, E ; Cengher, D</creator><creatorcontrib>Ghita, R.V ; Vasile, E ; Cengher, D</creatorcontrib><description>The technological process to achieve high quality oxides on GaAs and AlGaAs is more difficult than to achieve native oxides on silicon due to the lack of stable oxides on GaAs and related compounds. This paper presents technological conditions to a grow large area of native oxides on AlGaAs epilayers, to be used in laser diodes technology. Experimental results from scanning electron microscopy (SEM) and electron dispersion spectroscopy (EDS) measurements reveals the presence of two native oxides forms, namely GaAsO and AlGaAsO on a 430-μm
2 surface (twice as large a lateral growth than found in the literature).The proposed oxides structures are Ga
0.5As
0.5O and Al
0.1Ga
0.4As
0.5O
2. These oxide forms have dielectric behaviour on an AlGaAs epilayer.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/S0040-6090(98)00973-0</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Cross-disciplinary physics: materials science; rheology ; Electron microscopy ; Exact sciences and technology ; Gallium arsenide ; Heat treatment ; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids) ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Oxidation ; Physics</subject><ispartof>Thin solid films, 1999-01, Vol.338 (1), p.46-48</ispartof><rights>1999 Elsevier Science S.A.</rights><rights>1999 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c367t-9610d1875471fd27c0a3c52c4da182e9299aa8076355c6a865f689664d2707d73</citedby><cites>FETCH-LOGICAL-c367t-9610d1875471fd27c0a3c52c4da182e9299aa8076355c6a865f689664d2707d73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S0040-6090(98)00973-0$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3549,27923,27924,45994</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=1669819$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Ghita, R.V</creatorcontrib><creatorcontrib>Vasile, E</creatorcontrib><creatorcontrib>Cengher, D</creatorcontrib><title>Native oxides on AlGaAs epilayer</title><title>Thin solid films</title><description>The technological process to achieve high quality oxides on GaAs and AlGaAs is more difficult than to achieve native oxides on silicon due to the lack of stable oxides on GaAs and related compounds. This paper presents technological conditions to a grow large area of native oxides on AlGaAs epilayers, to be used in laser diodes technology. Experimental results from scanning electron microscopy (SEM) and electron dispersion spectroscopy (EDS) measurements reveals the presence of two native oxides forms, namely GaAsO and AlGaAsO on a 430-μm
2 surface (twice as large a lateral growth than found in the literature).The proposed oxides structures are Ga
0.5As
0.5O and Al
0.1Ga
0.4As
0.5O
2. These oxide forms have dielectric behaviour on an AlGaAs epilayer.</description><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electron microscopy</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>Heat treatment</subject><subject>Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Oxidation</subject><subject>Physics</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNqFkE1LAzEYhIMoWKs_QdiDiB5W3ySbr5OUolUoelDPISTvQmS7W5Ntsf_ebSt69DSXZ2aYIeScwg0FKm9fASooJRi4MvoawChewgEZUa1MyRSnh2T0ixyTk5w_AIAyxkekeHZ9XGPRfcWAuejaYtLM3CQXuIyN22A6JUe1azKe_eiYvD_cv00fy_nL7Gk6mZeeS9WXRlIIQ6GoFK0DUx4c94L5KjiqGRpmjHMalORCeOm0FLXURspqYEEFxcfkcp-7TN3nCnNvFzF7bBrXYrfKdsAE49QMoNiDPnU5J6ztMsWFSxtLwW7_sLs_7HasNdru_rAw-C5-Clz2rqmTa33Mf2Ypjd7F3-0xHMauIyabfcTWY4gJfW9DF_8p-gYnSXCh</recordid><startdate>19990129</startdate><enddate>19990129</enddate><creator>Ghita, R.V</creator><creator>Vasile, E</creator><creator>Cengher, D</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19990129</creationdate><title>Native oxides on AlGaAs epilayer</title><author>Ghita, R.V ; Vasile, E ; Cengher, D</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c367t-9610d1875471fd27c0a3c52c4da182e9299aa8076355c6a865f689664d2707d73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Electron microscopy</topic><topic>Exact sciences and technology</topic><topic>Gallium arsenide</topic><topic>Heat treatment</topic><topic>Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Oxidation</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ghita, R.V</creatorcontrib><creatorcontrib>Vasile, E</creatorcontrib><creatorcontrib>Cengher, D</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ghita, R.V</au><au>Vasile, E</au><au>Cengher, D</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Native oxides on AlGaAs epilayer</atitle><jtitle>Thin solid films</jtitle><date>1999-01-29</date><risdate>1999</risdate><volume>338</volume><issue>1</issue><spage>46</spage><epage>48</epage><pages>46-48</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>The technological process to achieve high quality oxides on GaAs and AlGaAs is more difficult than to achieve native oxides on silicon due to the lack of stable oxides on GaAs and related compounds. This paper presents technological conditions to a grow large area of native oxides on AlGaAs epilayers, to be used in laser diodes technology. Experimental results from scanning electron microscopy (SEM) and electron dispersion spectroscopy (EDS) measurements reveals the presence of two native oxides forms, namely GaAsO and AlGaAsO on a 430-μm
2 surface (twice as large a lateral growth than found in the literature).The proposed oxides structures are Ga
0.5As
0.5O and Al
0.1Ga
0.4As
0.5O
2. These oxide forms have dielectric behaviour on an AlGaAs epilayer.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/S0040-6090(98)00973-0</doi><tpages>3</tpages></addata></record> |
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| ispartof | Thin solid films, 1999-01, Vol.338 (1), p.46-48 |
| issn | 0040-6090 1879-2731 |
| language | eng |
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| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Cross-disciplinary physics: materials science rheology Electron microscopy Exact sciences and technology Gallium arsenide Heat treatment Liquid phase epitaxy deposition from liquid phases (melts, solutions, and surface layers on liquids) Materials science Methods of deposition of films and coatings film growth and epitaxy Oxidation Physics |
| title | Native oxides on AlGaAs epilayer |
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