CHARGE-STORAGE EFFECT OF VERTICALLY STACKED InAs NANODOTS EMBEDDED IN Al0.5Ga0.5As MATRIX

Authors describe the memory effect of vertically stacked InAs nanodots in the barrier layer of an Al0.5Ga0.5As/GaAs field-effect (FE) structure by comparing this effect with that of single-layer InAs nanodots in the same FE structure. These FE structures are grown by MBE, and Stranski-Krastanow isla...

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Veröffentlicht in:	Jpn.J.Appl.Phys ,Part 1. Vol. 41, no. 2B, pp. 967-971. 2002 Part 1. Vol. 41, no. 2B, pp. 967-971. 2002, 2002, Vol.41 (2B), p.967-971
Hauptverfasser:	Koike, K, Li, S, Komai, H, Sasa, S, Inoue, M, Yano, M
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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