Enhanced low-temperature corner current-carrying inherent to shallow trench isolation (STI)

Enhanced low-temperature corner current-carrying inherent to shallow trench isolation (STI)

The subthreshold hump in the current-voltage (I-V) characteristics caused by the current-carrying corner in shallow-trench-isolated (STI) n-channel MOSFET's is significantly enhanced at reduced temperatures. Numerical simulations show that the sensitivity of the corner channel's threshold...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 1999-10, Vol.20 (10), p.520-522
Hauptverfasser: Niu, G., Cressler, J.D., Mathew, S.J., Ahlgren, D.C.
Format: Artikel
Sprache:eng
Schlagworte:
CMOS technology
Computer simulation
Cooling
Corners
Cryogenics
Devices
Length measurement
Mathematical models
Microelectronics
MOSFET circuits
Random access memory
Swing
Temperature distribution
Temperature sensors
Threshold voltage
Trenches
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The subthreshold hump in the current-voltage (I-V) characteristics caused by the current-carrying corner in shallow-trench-isolated (STI) n-channel MOSFET's is significantly enhanced at reduced temperatures. Numerical simulations show that the sensitivity of the corner channel's threshold voltage to temperature is smaller than that of the center channel's threshold voltage. This, together with the reduced subthreshold swing at low temperatures, contribute to an enhanced subthreshold hump, and is potentially important for emerging cryogenic applications.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.791929