WO3 thin film prepared by pecvd technique and its gas sensing properties to NO2
Tungsten oxide films have been successfully fabricated from tungsten oxychloride (WOCl4) precursor by using plasma enhanced vapor deposition (PECVD) technique. The films were deposited onto silicon substrates and ceramic tubes maintained at 100°C under a constant operating pressure of He-O2 gas mixt...
Gespeichert in:
| Veröffentlicht in: | Journal of materials science 2001-01, Vol.36 (10), p.2535-2538 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 2538 |
|---|---|
| container_issue | 10 |
| container_start_page | 2535 |
| container_title | Journal of materials science |
| container_volume | 36 |
| creator | Tong, Maosong Dai, Guorui Wu, Yuanda He, Xiuli Gao, Dingsan |
| description | Tungsten oxide films have been successfully fabricated from tungsten oxychloride (WOCl4) precursor by using plasma enhanced vapor deposition (PECVD) technique. The films were deposited onto silicon substrates and ceramic tubes maintained at 100°C under a constant operating pressure of He-O2 gas mixtures. The compositions and the structures of the thin films have been investigated by means of anaysis methods, such as XRD, XPS, UV and IR. The as-deposited WO3 thin films were amorphous state and became crystalline after annealing above 400°C. The surface analysis of the films indicates that stoichiometry O/W is 2.77 : 1. The gas sensing measurements of the WO3 thin film sensors indicate that these sensors have a high sensitivity, excellent selectivity and quick response behavior to NO2. |
| doi_str_mv | 10.1023/a:1017950619864 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_pasca</sourceid><recordid>TN_cdi_proquest_miscellaneous_27030895</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>27030895</sourcerecordid><originalsourceid>FETCH-LOGICAL-c353t-a8cfd93be4babb17df3ea397f2e6d2533f3de0f848e470c28b09787e495abf623</originalsourceid><addsrcrecordid>eNpd0E1LxDAQh_EgCq4vZ68BxVt1kmma1JssvsFiL4rHkqaT3Szdbm26wn57A-7J01x-DA9_xq4E3AmQeG8fBAhdKihEaYr8iM2E0pjlBvCYzQCkzGReiFN2FuMaAJSWYsaqrwr5tAo996Hb8GGkwY7U8mbPB3I_LZ_IrfrwvSNu-5aHKfKljTxSH0O_TH470DgFinza8vdKXrATb7tIl4d7zj6fnz7mr9mienmbPy4yhwqnzBrn2xIbyhvbNEK3Hsliqb2kopUK0WNL4E1uKNfgpGmg1EZTXirb-ELiObv9-5sKUlyc6k2IjrrO9rTdxVpqQDClSvD6H1xvd2Of2mopC5CiQIlJ3RyUjc52frS9C7EexrCx475OA6ctFf4C_TxqGw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2260216323</pqid></control><display><type>article</type><title>WO3 thin film prepared by pecvd technique and its gas sensing properties to NO2</title><source>SpringerLink Journals - AutoHoldings</source><creator>Tong, Maosong ; Dai, Guorui ; Wu, Yuanda ; He, Xiuli ; Gao, Dingsan</creator><contributor>WCA</contributor><creatorcontrib>Tong, Maosong ; Dai, Guorui ; Wu, Yuanda ; He, Xiuli ; Gao, Dingsan ; WCA</creatorcontrib><description>Tungsten oxide films have been successfully fabricated from tungsten oxychloride (WOCl4) precursor by using plasma enhanced vapor deposition (PECVD) technique. The films were deposited onto silicon substrates and ceramic tubes maintained at 100°C under a constant operating pressure of He-O2 gas mixtures. The compositions and the structures of the thin films have been investigated by means of anaysis methods, such as XRD, XPS, UV and IR. The as-deposited WO3 thin films were amorphous state and became crystalline after annealing above 400°C. The surface analysis of the films indicates that stoichiometry O/W is 2.77 : 1. The gas sensing measurements of the WO3 thin film sensors indicate that these sensors have a high sensitivity, excellent selectivity and quick response behavior to NO2.</description><identifier>ISSN: 0022-2461</identifier><identifier>EISSN: 1573-4803</identifier><identifier>DOI: 10.1023/a:1017950619864</identifier><identifier>CODEN: JMTSAS</identifier><language>eng</language><publisher>Heidelberg: Springer</publisher><subject>Analytical chemistry ; Chemical analysis and related physical methods of analysis ; Chemical vapor deposition ; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Chemistry ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Gas mixtures ; Gas sensors ; General equipment and techniques ; General, instrumentation ; Instruments, apparatus, components and techniques common to several branches of physics and astronomy ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Nitrogen dioxide ; Oxide coatings ; Physics ; Selectivity ; Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing ; Silicon ; Silicon substrates ; Stoichiometry ; Surface analysis (chemical) ; Thin films ; Tubes ; Tungsten oxides ; Vapor deposition</subject><ispartof>Journal of materials science, 2001-01, Vol.36 (10), p.2535-2538</ispartof><rights>2001 INIST-CNRS</rights><rights>Journal of Materials Science is a copyright of Springer, (2001). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c353t-a8cfd93be4babb17df3ea397f2e6d2533f3de0f848e470c28b09787e495abf623</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=1025735$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><contributor>WCA</contributor><creatorcontrib>Tong, Maosong</creatorcontrib><creatorcontrib>Dai, Guorui</creatorcontrib><creatorcontrib>Wu, Yuanda</creatorcontrib><creatorcontrib>He, Xiuli</creatorcontrib><creatorcontrib>Gao, Dingsan</creatorcontrib><title>WO3 thin film prepared by pecvd technique and its gas sensing properties to NO2</title><title>Journal of materials science</title><description>Tungsten oxide films have been successfully fabricated from tungsten oxychloride (WOCl4) precursor by using plasma enhanced vapor deposition (PECVD) technique. The films were deposited onto silicon substrates and ceramic tubes maintained at 100°C under a constant operating pressure of He-O2 gas mixtures. The compositions and the structures of the thin films have been investigated by means of anaysis methods, such as XRD, XPS, UV and IR. The as-deposited WO3 thin films were amorphous state and became crystalline after annealing above 400°C. The surface analysis of the films indicates that stoichiometry O/W is 2.77 : 1. The gas sensing measurements of the WO3 thin film sensors indicate that these sensors have a high sensitivity, excellent selectivity and quick response behavior to NO2.</description><subject>Analytical chemistry</subject><subject>Chemical analysis and related physical methods of analysis</subject><subject>Chemical vapor deposition</subject><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Chemistry</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Gas mixtures</subject><subject>Gas sensors</subject><subject>General equipment and techniques</subject><subject>General, instrumentation</subject><subject>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Nitrogen dioxide</subject><subject>Oxide coatings</subject><subject>Physics</subject><subject>Selectivity</subject><subject>Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing</subject><subject>Silicon</subject><subject>Silicon substrates</subject><subject>Stoichiometry</subject><subject>Surface analysis (chemical)</subject><subject>Thin films</subject><subject>Tubes</subject><subject>Tungsten oxides</subject><subject>Vapor deposition</subject><issn>0022-2461</issn><issn>1573-4803</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNpd0E1LxDAQh_EgCq4vZ68BxVt1kmma1JssvsFiL4rHkqaT3Szdbm26wn57A-7J01x-DA9_xq4E3AmQeG8fBAhdKihEaYr8iM2E0pjlBvCYzQCkzGReiFN2FuMaAJSWYsaqrwr5tAo996Hb8GGkwY7U8mbPB3I_LZ_IrfrwvSNu-5aHKfKljTxSH0O_TH470DgFinza8vdKXrATb7tIl4d7zj6fnz7mr9mienmbPy4yhwqnzBrn2xIbyhvbNEK3Hsliqb2kopUK0WNL4E1uKNfgpGmg1EZTXirb-ELiObv9-5sKUlyc6k2IjrrO9rTdxVpqQDClSvD6H1xvd2Of2mopC5CiQIlJ3RyUjc52frS9C7EexrCx475OA6ctFf4C_TxqGw</recordid><startdate>20010101</startdate><enddate>20010101</enddate><creator>Tong, Maosong</creator><creator>Dai, Guorui</creator><creator>Wu, Yuanda</creator><creator>He, Xiuli</creator><creator>Gao, Dingsan</creator><general>Springer</general><general>Springer Nature B.V</general><scope>IQODW</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M7S</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>7QQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20010101</creationdate><title>WO3 thin film prepared by pecvd technique and its gas sensing properties to NO2</title><author>Tong, Maosong ; Dai, Guorui ; Wu, Yuanda ; He, Xiuli ; Gao, Dingsan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c353t-a8cfd93be4babb17df3ea397f2e6d2533f3de0f848e470c28b09787e495abf623</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Analytical chemistry</topic><topic>Chemical analysis and related physical methods of analysis</topic><topic>Chemical vapor deposition</topic><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Chemistry</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Gas mixtures</topic><topic>Gas sensors</topic><topic>General equipment and techniques</topic><topic>General, instrumentation</topic><topic>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Nitrogen dioxide</topic><topic>Oxide coatings</topic><topic>Physics</topic><topic>Selectivity</topic><topic>Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing</topic><topic>Silicon</topic><topic>Silicon substrates</topic><topic>Stoichiometry</topic><topic>Surface analysis (chemical)</topic><topic>Thin films</topic><topic>Tubes</topic><topic>Tungsten oxides</topic><topic>Vapor deposition</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tong, Maosong</creatorcontrib><creatorcontrib>Dai, Guorui</creatorcontrib><creatorcontrib>Wu, Yuanda</creatorcontrib><creatorcontrib>He, Xiuli</creatorcontrib><creatorcontrib>Gao, Dingsan</creatorcontrib><collection>Pascal-Francis</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>Ceramic Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tong, Maosong</au><au>Dai, Guorui</au><au>Wu, Yuanda</au><au>He, Xiuli</au><au>Gao, Dingsan</au><au>WCA</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>WO3 thin film prepared by pecvd technique and its gas sensing properties to NO2</atitle><jtitle>Journal of materials science</jtitle><date>2001-01-01</date><risdate>2001</risdate><volume>36</volume><issue>10</issue><spage>2535</spage><epage>2538</epage><pages>2535-2538</pages><issn>0022-2461</issn><eissn>1573-4803</eissn><coden>JMTSAS</coden><abstract>Tungsten oxide films have been successfully fabricated from tungsten oxychloride (WOCl4) precursor by using plasma enhanced vapor deposition (PECVD) technique. The films were deposited onto silicon substrates and ceramic tubes maintained at 100°C under a constant operating pressure of He-O2 gas mixtures. The compositions and the structures of the thin films have been investigated by means of anaysis methods, such as XRD, XPS, UV and IR. The as-deposited WO3 thin films were amorphous state and became crystalline after annealing above 400°C. The surface analysis of the films indicates that stoichiometry O/W is 2.77 : 1. The gas sensing measurements of the WO3 thin film sensors indicate that these sensors have a high sensitivity, excellent selectivity and quick response behavior to NO2.</abstract><cop>Heidelberg</cop><pub>Springer</pub><doi>10.1023/a:1017950619864</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0022-2461 |
| ispartof | Journal of materials science, 2001-01, Vol.36 (10), p.2535-2538 |
| issn | 0022-2461 1573-4803 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_27030895 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | Analytical chemistry Chemical analysis and related physical methods of analysis Chemical vapor deposition Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Chemistry Cross-disciplinary physics: materials science rheology Exact sciences and technology Gas mixtures Gas sensors General equipment and techniques General, instrumentation Instruments, apparatus, components and techniques common to several branches of physics and astronomy Materials science Methods of deposition of films and coatings film growth and epitaxy Nitrogen dioxide Oxide coatings Physics Selectivity Sensors (chemical, optical, electrical, movement, gas, etc.) remote sensing Silicon Silicon substrates Stoichiometry Surface analysis (chemical) Thin films Tubes Tungsten oxides Vapor deposition |
| title | WO3 thin film prepared by pecvd technique and its gas sensing properties to NO2 |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T21%3A51%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pasca&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=WO3%20thin%20film%20prepared%20by%20pecvd%20technique%20and%20its%20gas%20sensing%20properties%20to%20NO2&rft.jtitle=Journal%20of%20materials%20science&rft.au=Tong,%20Maosong&rft.date=2001-01-01&rft.volume=36&rft.issue=10&rft.spage=2535&rft.epage=2538&rft.pages=2535-2538&rft.issn=0022-2461&rft.eissn=1573-4803&rft.coden=JMTSAS&rft_id=info:doi/10.1023/a:1017950619864&rft_dat=%3Cproquest_pasca%3E27030895%3C/proquest_pasca%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2260216323&rft_id=info:pmid/&rfr_iscdi=true |