Evidence of the enhanced resonant tunneling effect in a triple-barrier heterostructure
The effect of properly lined-up quantum-well (QW) states, under an external bias, on the electron resonant tunneling is investigated in an InAlAs/InGaAs triple-barrier structure. The degree of alignment of two QW confined ground states at a resonant voltage is analyzed with low-temperature measureme...
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| Veröffentlicht in: | Superlattices and microstructures 2001-01, Vol.29 (1), p.51-55 |
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| container_title | Superlattices and microstructures |
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| creator | Kim, Gyungock Koh, Kwang Man Kim, Chong Hoon |
| description | The effect of properly lined-up quantum-well (QW) states, under an external bias, on the electron resonant tunneling is investigated in an InAlAs/InGaAs triple-barrier structure. The degree of alignment of two QW confined ground states at a resonant voltage is analyzed with low-temperature measurement. The experimental data shows the enhanced resonant tunneling effects, and proves that the second QW structure added to the InGaAs/ InAlAs double-barrier heterostructure can act as an effective tool for probing and extracting the resonant tunneling properties deep in a QW. |
| doi_str_mv | 10.1006/spmi.2000.0913 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_27028742</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0749603600909133</els_id><sourcerecordid>27028742</sourcerecordid><originalsourceid>FETCH-LOGICAL-c411t-34c360bda24a3646e932f7733463f3221e086d1aff046e286709d10ed076c2273</originalsourceid><addsrcrecordid>eNp1kDtLBDEQgIMoeD5a64Bgt-fkQbJbynE-QLBR2xCzEy-ylz2TrOC_N8uJndUwzDevj5ALBksGoK7zbhuWHACW0DFxQBYMOtUIpfUhWYCWXaNAqGNykvNHpTrJ9IK8rr9Cj9EhHT0tG6QYN7amPU2Yx2hjoWWKEYcQ3yl6j67QEKmlJYXdgM2bTSlgohssmMZc0uTKlPCMHHk7ZDz_jafk5Xb9vLpvHp_uHlY3j42TjJVGSCcUvPWWSyuUVNgJ7rUWQirhBecMoVU9s95DLfJWaeh6BtiDVo5zLU7J1X7uLo2fE-ZitiE7HAYbcZyy4Rp4qyWv4HIPunplTujNLoWtTd-GgZn1mVmfmfWZWV9tuPydbLOzg0_VSsh_XR1rZdtVqt1TWJ_8qiJMdmHW2YdUVZl-DP8t-AHB34MX</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27028742</pqid></control><display><type>article</type><title>Evidence of the enhanced resonant tunneling effect in a triple-barrier heterostructure</title><source>Elsevier ScienceDirect Journals Complete</source><creator>Kim, Gyungock ; Koh, Kwang Man ; Kim, Chong Hoon</creator><creatorcontrib>Kim, Gyungock ; Koh, Kwang Man ; Kim, Chong Hoon</creatorcontrib><description>The effect of properly lined-up quantum-well (QW) states, under an external bias, on the electron resonant tunneling is investigated in an InAlAs/InGaAs triple-barrier structure. The degree of alignment of two QW confined ground states at a resonant voltage is analyzed with low-temperature measurement. The experimental data shows the enhanced resonant tunneling effects, and proves that the second QW structure added to the InGaAs/ InAlAs double-barrier heterostructure can act as an effective tool for probing and extracting the resonant tunneling properties deep in a QW.</description><identifier>ISSN: 0749-6036</identifier><identifier>EISSN: 1096-3677</identifier><identifier>DOI: 10.1006/spmi.2000.0913</identifier><identifier>CODEN: SUMIEK</identifier><language>eng</language><publisher>Oxford: Elsevier Ltd</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electrical properties of specific thin films ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport in interface structures ; Exact sciences and technology ; Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions ; Physics ; Quantum wells ; resonant tunneling heterostructure ; Tunneling</subject><ispartof>Superlattices and microstructures, 2001-01, Vol.29 (1), p.51-55</ispartof><rights>2001 Academic Press</rights><rights>2001 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c411t-34c360bda24a3646e932f7733463f3221e086d1aff046e286709d10ed076c2273</citedby><cites>FETCH-LOGICAL-c411t-34c360bda24a3646e932f7733463f3221e086d1aff046e286709d10ed076c2273</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1006/spmi.2000.0913$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,4024,27923,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=918489$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kim, Gyungock</creatorcontrib><creatorcontrib>Koh, Kwang Man</creatorcontrib><creatorcontrib>Kim, Chong Hoon</creatorcontrib><title>Evidence of the enhanced resonant tunneling effect in a triple-barrier heterostructure</title><title>Superlattices and microstructures</title><description>The effect of properly lined-up quantum-well (QW) states, under an external bias, on the electron resonant tunneling is investigated in an InAlAs/InGaAs triple-barrier structure. The degree of alignment of two QW confined ground states at a resonant voltage is analyzed with low-temperature measurement. The experimental data shows the enhanced resonant tunneling effects, and proves that the second QW structure added to the InGaAs/ InAlAs double-barrier heterostructure can act as an effective tool for probing and extracting the resonant tunneling properties deep in a QW.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electrical properties of specific thin films</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport in interface structures</subject><subject>Exact sciences and technology</subject><subject>Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions</subject><subject>Physics</subject><subject>Quantum wells</subject><subject>resonant tunneling heterostructure</subject><subject>Tunneling</subject><issn>0749-6036</issn><issn>1096-3677</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNp1kDtLBDEQgIMoeD5a64Bgt-fkQbJbynE-QLBR2xCzEy-ylz2TrOC_N8uJndUwzDevj5ALBksGoK7zbhuWHACW0DFxQBYMOtUIpfUhWYCWXaNAqGNykvNHpTrJ9IK8rr9Cj9EhHT0tG6QYN7amPU2Yx2hjoWWKEYcQ3yl6j67QEKmlJYXdgM2bTSlgohssmMZc0uTKlPCMHHk7ZDz_jafk5Xb9vLpvHp_uHlY3j42TjJVGSCcUvPWWSyuUVNgJ7rUWQirhBecMoVU9s95DLfJWaeh6BtiDVo5zLU7J1X7uLo2fE-ZitiE7HAYbcZyy4Rp4qyWv4HIPunplTujNLoWtTd-GgZn1mVmfmfWZWV9tuPydbLOzg0_VSsh_XR1rZdtVqt1TWJ_8qiJMdmHW2YdUVZl-DP8t-AHB34MX</recordid><startdate>200101</startdate><enddate>200101</enddate><creator>Kim, Gyungock</creator><creator>Koh, Kwang Man</creator><creator>Kim, Chong Hoon</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>200101</creationdate><title>Evidence of the enhanced resonant tunneling effect in a triple-barrier heterostructure</title><author>Kim, Gyungock ; Koh, Kwang Man ; Kim, Chong Hoon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c411t-34c360bda24a3646e932f7733463f3221e086d1aff046e286709d10ed076c2273</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electrical properties of specific thin films</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport in interface structures</topic><topic>Exact sciences and technology</topic><topic>Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions</topic><topic>Physics</topic><topic>Quantum wells</topic><topic>resonant tunneling heterostructure</topic><topic>Tunneling</topic><toplevel>online_resources</toplevel><creatorcontrib>Kim, Gyungock</creatorcontrib><creatorcontrib>Koh, Kwang Man</creatorcontrib><creatorcontrib>Kim, Chong Hoon</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Superlattices and microstructures</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Gyungock</au><au>Koh, Kwang Man</au><au>Kim, Chong Hoon</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Evidence of the enhanced resonant tunneling effect in a triple-barrier heterostructure</atitle><jtitle>Superlattices and microstructures</jtitle><date>2001-01</date><risdate>2001</risdate><volume>29</volume><issue>1</issue><spage>51</spage><epage>55</epage><pages>51-55</pages><issn>0749-6036</issn><eissn>1096-3677</eissn><coden>SUMIEK</coden><abstract>The effect of properly lined-up quantum-well (QW) states, under an external bias, on the electron resonant tunneling is investigated in an InAlAs/InGaAs triple-barrier structure. The degree of alignment of two QW confined ground states at a resonant voltage is analyzed with low-temperature measurement. The experimental data shows the enhanced resonant tunneling effects, and proves that the second QW structure added to the InGaAs/ InAlAs double-barrier heterostructure can act as an effective tool for probing and extracting the resonant tunneling properties deep in a QW.</abstract><cop>Oxford</cop><pub>Elsevier Ltd</pub><doi>10.1006/spmi.2000.0913</doi><tpages>5</tpages></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions Physics Quantum wells resonant tunneling heterostructure Tunneling |
| title | Evidence of the enhanced resonant tunneling effect in a triple-barrier heterostructure |
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