The characterization of amorphous carbon nitride films grown by RFCVD method

Nitrogenized amorphous carbon a-C(N):H films were grown by using radio frequency plasma-enhanced chemical vapor deposition (rf-PECVD) with various mixture ratios of CH 4 and NH 4OH. The film adhesion was improved using argon plasma to bombard the silicon substrates prior to the carbon nitride growth...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of non-crystalline solids 2001-05, Vol.283 (1), p.95-100
Hauptverfasser:	Chen, Sheng-Yuan, Lue, Juh-Tzeng
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!