Lattice strain in oxidized Si nanostructure arrays from X-ray measurements

Although lattice strains in oxidized wafers can be detected by optical and X-ray methods the measurement of strains in non-planar structures such as occur in Si devices is more difficult. We describe a novel technique for measuring such strains and report results for oxidized Si. In our work we have...

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Veröffentlicht in:	Thin solid films 1999-04, Vol.343, p.365-369
Hauptverfasser:	Tanaka, S., Umbach, C.C., Shen, Q., Blakely, J.M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Silicon Silicon oxide Stress X-ray diffraction
Online-Zugang:	Volltext
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