Structural parameters governing properties of GaInSb/InAs infra-red detectors

A series of GaInSb/InAs heterostructures for infra-red detector devices are studied using a strain-dependent empirical pseudopotential scheme. The effect of a number of structural design parameters upon key properties of the structures for detector applications is examined, through the calculation of dynamical characteristics in the presence of commonly occurring defects and through optical absorption spectra. Large changes in the scattering cross-sections of particular defects are related to variations in the superlattice layer widths, enabling the wave-function engineering of optimised detector structures with regard to lifetimes.