P-type electrical contacts for 2D transition-metal dichalcogenides

Digital logic circuits are based on complementary pairs of n- and p-type field effect transistors (FETs) via complementary metal oxide semiconductor technology. In three-dimensional (3D) or bulk semiconductors, substitutional doping of acceptor or donor impurities is used to achieve p- and n-type FE...

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Veröffentlicht in:	Nature (London) 2022-10, Vol.610 (7930), p.61-66
Hauptverfasser:	Wang, Yan, Kim, Jong Chan, Li, Yang, Ma, Kyung Yeol, Hong, Seokmo, Kim, Minsu, Shin, Hyeon Suk, Jeong, Hu Young, Chhowalla, Manish
Format:	Artikel
Sprache:	eng
Schlagworte:	140/146 639/166/987 639/301/1005/1007 639/301/357/995 639/925/927/1007 Chalcogenides Chemical interactions CMOS Contact resistance Doping Electric contacts Electron beams Electron transport Energy conversion efficiency Evaporation Field effect transistors Heavy metals Humanities and Social Sciences Impurities Interfaces Logic circuits Metals Molybdenum Molybdenum disulfide multidisciplinary Open circuit voltage P-type semiconductors Palladium Photovoltaic cells Photovoltaics Platinum Room temperature Science Science (multidisciplinary) Semiconductor devices Semiconductors Spectroscopy Transistors Transition metal compounds Tungsten
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