α-SiC layers grown on silicon via nano-sized silicon nitride precursor route
alpha -SiC thin layers were successfully grown on silicon (111) by pyrolysis of the organic liquid dip-coating films and polyimide Langmuir-Blodgett (LB) films containing nanometer sized amorphous silicon nitride powders (NASNP) at 900-1000 degree C in vacuum. The products were characterized by X-ra...
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| Veröffentlicht in: | Thin solid films 1999-05, Vol.345 (2), p.188-191 |
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| container_issue | 2 |
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| container_title | Thin solid films |
| container_volume | 345 |
| creator | Liu, Ruchuan Yang, Beifang Fu, Zhengping Chen, Qian Hong, Lin Li, Ming Liu, Zongcai Ruan, Yaozhong |
| description | alpha -SiC thin layers were successfully grown on silicon (111) by pyrolysis of the organic liquid dip-coating films and polyimide Langmuir-Blodgett (LB) films containing nanometer sized amorphous silicon nitride powders (NASNP) at 900-1000 degree C in vacuum. The products were characterized by X-ray diffraction (XRD), infrared absorption (IR) and Raman spectra, the results of which strongly support the formation of preferred orientated 4H-SiC in the layers by pyrolysis of LB films containing NASNP. Based on the IR spectra of samples pyrolyzed at different temperatures and the computed values of the Gibbs free energy changes of the reactions, the mechanism of formation of alpha -SiC is discussed. |
| doi_str_mv | 10.1016/S0040-6090(99)00047-4 |
| format | Article |
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The products were characterized by X-ray diffraction (XRD), infrared absorption (IR) and Raman spectra, the results of which strongly support the formation of preferred orientated 4H-SiC in the layers by pyrolysis of LB films containing NASNP. Based on the IR spectra of samples pyrolyzed at different temperatures and the computed values of the Gibbs free energy changes of the reactions, the mechanism of formation of alpha -SiC is discussed.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/S0040-6090(99)00047-4</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier Science</publisher><subject>Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids) ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Nanoscale materials and structures: fabrication and characterization ; Physics</subject><ispartof>Thin solid films, 1999-05, Vol.345 (2), p.188-191</ispartof><rights>1999 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c311t-6e307a43e19d13d9db01208de5b0f47eafee6c8dcc74207ef8c7c257a00443cb3</citedby><cites>FETCH-LOGICAL-c311t-6e307a43e19d13d9db01208de5b0f47eafee6c8dcc74207ef8c7c257a00443cb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=1807129$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Liu, Ruchuan</creatorcontrib><creatorcontrib>Yang, Beifang</creatorcontrib><creatorcontrib>Fu, Zhengping</creatorcontrib><creatorcontrib>Chen, Qian</creatorcontrib><creatorcontrib>Hong, Lin</creatorcontrib><creatorcontrib>Li, Ming</creatorcontrib><creatorcontrib>Liu, Zongcai</creatorcontrib><creatorcontrib>Ruan, Yaozhong</creatorcontrib><title>α-SiC layers grown on silicon via nano-sized silicon nitride precursor route</title><title>Thin solid films</title><description>alpha -SiC thin layers were successfully grown on silicon (111) by pyrolysis of the organic liquid dip-coating films and polyimide Langmuir-Blodgett (LB) films containing nanometer sized amorphous silicon nitride powders (NASNP) at 900-1000 degree C in vacuum. The products were characterized by X-ray diffraction (XRD), infrared absorption (IR) and Raman spectra, the results of which strongly support the formation of preferred orientated 4H-SiC in the layers by pyrolysis of LB films containing NASNP. Based on the IR spectra of samples pyrolyzed at different temperatures and the computed values of the Gibbs free energy changes of the reactions, the mechanism of formation of alpha -SiC is discussed.</description><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Physics</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNpFkMtKAzEUhoMoWKuPIGQhootobp1MllK8QcVFdR3SzBmJTJOazCj1rXwRn8nphbr6OYfvP5cfoVNGrxhlxfWUUklJQTW90PqS9pUicg8NWKk04UqwfTTYIYfoKOf3HmKciwF6-v0hUz_GjV1Cyvgtxa-AY8DZN971-uktDjZEkv03VLt28G3yFeBFAtelHBNOsWvhGB3UtslwstUher27fRk_kMnz_eP4ZkKcYKwlBQiqrBTAdMVEpatZfw0tKxjNaC0V2BqgcGXlnJKcKqhLpxwfKdt_IYWbiSE638xdpPjRQW7N3GcHTWMDxC4bXmgleFH24GgDuhRzTlCbRfJzm5aGUbMKz6zDM6tkjNZmHZ6Rve9su8BmZ5s62eB8_jeXVDGuxR-LtHBX</recordid><startdate>19990521</startdate><enddate>19990521</enddate><creator>Liu, Ruchuan</creator><creator>Yang, Beifang</creator><creator>Fu, Zhengping</creator><creator>Chen, Qian</creator><creator>Hong, Lin</creator><creator>Li, Ming</creator><creator>Liu, Zongcai</creator><creator>Ruan, Yaozhong</creator><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19990521</creationdate><title>α-SiC layers grown on silicon via nano-sized silicon nitride precursor route</title><author>Liu, Ruchuan ; Yang, Beifang ; Fu, Zhengping ; Chen, Qian ; Hong, Lin ; Li, Ming ; Liu, Zongcai ; Ruan, Yaozhong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c311t-6e307a43e19d13d9db01208de5b0f47eafee6c8dcc74207ef8c7c257a00443cb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Ruchuan</creatorcontrib><creatorcontrib>Yang, Beifang</creatorcontrib><creatorcontrib>Fu, Zhengping</creatorcontrib><creatorcontrib>Chen, Qian</creatorcontrib><creatorcontrib>Hong, Lin</creatorcontrib><creatorcontrib>Li, Ming</creatorcontrib><creatorcontrib>Liu, Zongcai</creatorcontrib><creatorcontrib>Ruan, Yaozhong</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Ruchuan</au><au>Yang, Beifang</au><au>Fu, Zhengping</au><au>Chen, Qian</au><au>Hong, Lin</au><au>Li, Ming</au><au>Liu, Zongcai</au><au>Ruan, Yaozhong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>α-SiC layers grown on silicon via nano-sized silicon nitride precursor route</atitle><jtitle>Thin solid films</jtitle><date>1999-05-21</date><risdate>1999</risdate><volume>345</volume><issue>2</issue><spage>188</spage><epage>191</epage><pages>188-191</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>alpha -SiC thin layers were successfully grown on silicon (111) by pyrolysis of the organic liquid dip-coating films and polyimide Langmuir-Blodgett (LB) films containing nanometer sized amorphous silicon nitride powders (NASNP) at 900-1000 degree C in vacuum. The products were characterized by X-ray diffraction (XRD), infrared absorption (IR) and Raman spectra, the results of which strongly support the formation of preferred orientated 4H-SiC in the layers by pyrolysis of LB films containing NASNP. Based on the IR spectra of samples pyrolyzed at different temperatures and the computed values of the Gibbs free energy changes of the reactions, the mechanism of formation of alpha -SiC is discussed.</abstract><cop>Lausanne</cop><pub>Elsevier Science</pub><doi>10.1016/S0040-6090(99)00047-4</doi><tpages>4</tpages></addata></record> |
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| ispartof | Thin solid films, 1999-05, Vol.345 (2), p.188-191 |
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| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | Cross-disciplinary physics: materials science rheology Exact sciences and technology Liquid phase epitaxy deposition from liquid phases (melts, solutions, and surface layers on liquids) Materials science Methods of deposition of films and coatings film growth and epitaxy Nanoscale materials and structures: fabrication and characterization Physics |
| title | α-SiC layers grown on silicon via nano-sized silicon nitride precursor route |
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