Electron exo-emission study of PECVD and thermal CVD silicon rich silicon oxide

Silicon oxide films have been deposited by the PECVD and Thermal CVD methods under different deposition conditions and using different source gases. The FTIR spectra of these films reveal varying microstructure in terms of the Si–O stoichiometry for films prepared under different sets of process con...

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Veröffentlicht in:	Solid state communications 1999-01, Vol.111 (8), p.431-435
Hauptverfasser:	Dusane, S., Bhave, T., Hullavard, S., Bhoraskar, S.V., Lokhare, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	A. Nanostructures A. Thin films B. Chemical synthesis Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology E. Electron emission spectroscopies E. Luminescence Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics
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