Growth of magnesium oxide thin films using single molecular precursors by metal–organic chemical vapor deposition

Thin films of MgO have been deposited on Si(100) and c-plane sapphire substrates by the metal–organic chemical vapor deposition (MOCVD) method using Mg(tmhd) 2 and Mg(acac) 2 as single molecular precursors and oxygen as carrier gas. We have synthesized the metal–organic precursors used in this study...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Thin solid films 1999-03, Vol.341 (1), p.63-67
Hauptverfasser:	Boo, Jin-Hyo, Lee, Soon-Bo, Yu, Kyu-Sang, Koh, Wonyong, Kim, Yunsoo
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy MgO MOCVD Physics Sapphire Silicon Single molecular precursors
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!