SiO2 SURFACE AND SiO2/Si INTERFACE TOPOGRAPHY CHANGE BY THERMAL OXIDATION

Using a wide atomically flat (111) Si surface, the topography change of SiO2 surface and SiO2/Si interface by thermal oxidation was investigated for various oxidation temperatures. The initial step/terrace configuration was preserved on the SiO2 surface irrespective of oxidation temperature. On the...

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Veröffentlicht in:	Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 8, pp. 4763-4768. 2001 Part 1. Vol. 40, no. 8, pp. 4763-4768. 2001, 2001, Vol.40 (8), p.4763-4768
Hauptverfasser:	Tokuda, N, Murata, M, Hojo, D, Yamabe, K
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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