"Seedless" electrochemical deposition of copper on physical vapor deposition-W sub(2)N liner materials for ultra large scale integration (ULSI) devices

Electrochemical studies are designed to identify processes that provide adequate nucleation and thin film growth directly on ultrathin, air-exposed physical vapor deposition (PVD)-tungsten nitride diffusion barriers. In this study, it is shown that very thin copper films can be nucleated directly on...

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Veröffentlicht in:	Journal of electronic materials 2001-12, Vol.30 (12), p.1602-1608
Hauptverfasser:	Shaw, Michael J, Grunow, Stephan, Duqette, David J
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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