SIMS study of silicon oxynitride prepared by oxidation of silicon-rich silicon nitride layer

We proposed a novel process for fabrication silicon oxide–oxynitride–oxide structure for ULSI device applications. By deposition of silicon-rich silicon nitride and then following a thermal oxidation process, a good oxynitride layer was obtained. Secondary ion mass spectroscopy (SIMS) study reveals...

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Veröffentlicht in:	Microelectronics and reliability 2001-12, Vol.41 (12), p.2071-2074
Hauptverfasser:	Poon, M.C, Gao, Y, Kok, T.C.W, Myasnikov, A.M, Wong, H
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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