SIMS study of silicon oxynitride prepared by oxidation of silicon-rich silicon nitride layer
We proposed a novel process for fabrication silicon oxide–oxynitride–oxide structure for ULSI device applications. By deposition of silicon-rich silicon nitride and then following a thermal oxidation process, a good oxynitride layer was obtained. Secondary ion mass spectroscopy (SIMS) study reveals...
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| Veröffentlicht in: | Microelectronics and reliability 2001-12, Vol.41 (12), p.2071-2074 |
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| container_end_page | 2074 |
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| container_issue | 12 |
| container_start_page | 2071 |
| container_title | Microelectronics and reliability |
| container_volume | 41 |
| creator | Poon, M.C Gao, Y Kok, T.C.W Myasnikov, A.M Wong, H |
| description | We proposed a novel process for fabrication silicon oxide–oxynitride–oxide structure for ULSI device applications. By deposition of silicon-rich silicon nitride and then following a thermal oxidation process, a good oxynitride layer was obtained. Secondary ion mass spectroscopy (SIMS) study reveals that the hydrogen content of nitride film at the interface can be reduced by more than 40% when compared to stoichiometric nitride. With this method, high nitrogen content oxynitride and smoother oxynitride/oxide interfaces result in the reduction of the interface charge trapping remarkably. |
| doi_str_mv | 10.1016/S0026-2714(01)00216-5 |
| format | Article |
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By deposition of silicon-rich silicon nitride and then following a thermal oxidation process, a good oxynitride layer was obtained. Secondary ion mass spectroscopy (SIMS) study reveals that the hydrogen content of nitride film at the interface can be reduced by more than 40% when compared to stoichiometric nitride. With this method, high nitrogen content oxynitride and smoother oxynitride/oxide interfaces result in the reduction of the interface charge trapping remarkably.</description><identifier>ISSN: 0026-2714</identifier><identifier>EISSN: 1872-941X</identifier><identifier>DOI: 10.1016/S0026-2714(01)00216-5</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><ispartof>Microelectronics and reliability, 2001-12, Vol.41 (12), p.2071-2074</ispartof><rights>2001 Elsevier Science Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c338t-f375dffc4ad01a716257fa7a18e460505837e613abb99d8274224eaea7527eaa3</citedby><cites>FETCH-LOGICAL-c338t-f375dffc4ad01a716257fa7a18e460505837e613abb99d8274224eaea7527eaa3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0026271401002165$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids></links><search><creatorcontrib>Poon, M.C</creatorcontrib><creatorcontrib>Gao, Y</creatorcontrib><creatorcontrib>Kok, T.C.W</creatorcontrib><creatorcontrib>Myasnikov, A.M</creatorcontrib><creatorcontrib>Wong, H</creatorcontrib><title>SIMS study of silicon oxynitride prepared by oxidation of silicon-rich silicon nitride layer</title><title>Microelectronics and reliability</title><description>We proposed a novel process for fabrication silicon oxide–oxynitride–oxide structure for ULSI device applications. By deposition of silicon-rich silicon nitride and then following a thermal oxidation process, a good oxynitride layer was obtained. Secondary ion mass spectroscopy (SIMS) study reveals that the hydrogen content of nitride film at the interface can be reduced by more than 40% when compared to stoichiometric nitride. 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| title | SIMS study of silicon oxynitride prepared by oxidation of silicon-rich silicon nitride layer |
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