Dry etching of BaSrTiO3 and LaNiO3 thin films in inductively coupled plasmas

High density plasma etching of (Ba,Sr)TiO3 (BST) and LaNiO3 (LNO) thin films was performed in two different plasma chemistries, Cl2/Ar and CH4/H2/Ar. While the latter chemistry produced extremely low etch rates (less than or equal to 10 nm/min) under all conditions, the Cl2/Ar produced smooth anisot...

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Veröffentlicht in:Journal of the Electrochemical Society 1999-10, Vol.146 (10), p.3778-3782
Hauptverfasser: LEE, K. P, JUNG, K. B, A.SRIVASTAVA, KUMAR, D, SINGH, R. K, PEARTON, S. J
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container_issue 10
container_start_page 3778
container_title Journal of the Electrochemical Society
container_volume 146
creator LEE, K. P
JUNG, K. B
A.SRIVASTAVA
KUMAR, D
SINGH, R. K
PEARTON, S. J
description High density plasma etching of (Ba,Sr)TiO3 (BST) and LaNiO3 (LNO) thin films was performed in two different plasma chemistries, Cl2/Ar and CH4/H2/Ar. While the latter chemistry produced extremely low etch rates (less than or equal to 10 nm/min) under all conditions, the Cl2/Ar produced smooth anisotropic pattern transfer. The etching was still strongly ion-assisted, but maximum removal rates of about 90 nm/min for both materials were achieved with selectivities of about 16 for BST and about 7 for LNO over Si. A single layer of thick (about 7 micron) photoresist is an effective mask under these conditions. 22 refs.
doi_str_mv 10.1149/1.1392549
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source IOP Publishing Journals
subjects Applied sciences
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
Lithography, masks and pattern transfer
Materials science
Microelectronic fabrication (materials and surfaces technology)
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Surface cleaning, etching, patterning
Surface treatments
title Dry etching of BaSrTiO3 and LaNiO3 thin films in inductively coupled plasmas
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