Dry etching of BaSrTiO3 and LaNiO3 thin films in inductively coupled plasmas
High density plasma etching of (Ba,Sr)TiO3 (BST) and LaNiO3 (LNO) thin films was performed in two different plasma chemistries, Cl2/Ar and CH4/H2/Ar. While the latter chemistry produced extremely low etch rates (less than or equal to 10 nm/min) under all conditions, the Cl2/Ar produced smooth anisot...
Gespeichert in:
Veröffentlicht in: | Journal of the Electrochemical Society 1999-10, Vol.146 (10), p.3778-3782 |
---|---|
Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 3782 |
---|---|
container_issue | 10 |
container_start_page | 3778 |
container_title | Journal of the Electrochemical Society |
container_volume | 146 |
creator | LEE, K. P JUNG, K. B A.SRIVASTAVA KUMAR, D SINGH, R. K PEARTON, S. J |
description | High density plasma etching of (Ba,Sr)TiO3 (BST) and LaNiO3 (LNO) thin films was performed in two different plasma chemistries, Cl2/Ar and CH4/H2/Ar. While the latter chemistry produced extremely low etch rates (less than or equal to 10 nm/min) under all conditions, the Cl2/Ar produced smooth anisotropic pattern transfer. The etching was still strongly ion-assisted, but maximum removal rates of about 90 nm/min for both materials were achieved with selectivities of about 16 for BST and about 7 for LNO over Si. A single layer of thick (about 7 micron) photoresist is an effective mask under these conditions. 22 refs. |
doi_str_mv | 10.1149/1.1392549 |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_26930179</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>26930179</sourcerecordid><originalsourceid>FETCH-LOGICAL-c322t-d181324bc0f2f1c41f95b8f5a101d2af6fcbf194adc72a62593733e61c608eeb3</originalsourceid><addsrcrecordid>eNpFkEtLxDAUhYMoOI4u_AdZiOCiY27SV5Y6PqE4C8d1uU0TjaQPk1bov7fDDLi653K_ezgcQi6BrQBieQsrEJInsTwiC5BxEmUAcEwWjIGI4jSBU3IWwve8Qh5nC1I8-InqQX3Z9pN2ht7ju9_ajaDY1rTAt50c5iM11jWBzsK29agG-6vdRFU39k7XtHcYGgzn5MSgC_riMJfk4-lxu36Jis3z6_quiJTgfIhqyEHwuFLMcAMqBiOTKjcJAoOao0mNqswcHmuVcUx5IkUmhE5BpSzXuhJLcr337X33M-owlI0NSjuHre7GUPJUCgaZnMGbPah8F4LXpuy9bdBPJbBy11cJ5aGvmb06mGJQ6IzHVtnw_wA5E0yIPyOyaD4</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>26930179</pqid></control><display><type>article</type><title>Dry etching of BaSrTiO3 and LaNiO3 thin films in inductively coupled plasmas</title><source>IOP Publishing Journals</source><creator>LEE, K. P ; JUNG, K. B ; A.SRIVASTAVA ; KUMAR, D ; SINGH, R. K ; PEARTON, S. J</creator><contributor>WCA</contributor><creatorcontrib>LEE, K. P ; JUNG, K. B ; A.SRIVASTAVA ; KUMAR, D ; SINGH, R. K ; PEARTON, S. J ; WCA</creatorcontrib><description>High density plasma etching of (Ba,Sr)TiO3 (BST) and LaNiO3 (LNO) thin films was performed in two different plasma chemistries, Cl2/Ar and CH4/H2/Ar. While the latter chemistry produced extremely low etch rates (less than or equal to 10 nm/min) under all conditions, the Cl2/Ar produced smooth anisotropic pattern transfer. The etching was still strongly ion-assisted, but maximum removal rates of about 90 nm/min for both materials were achieved with selectivities of about 16 for BST and about 7 for LNO over Si. A single layer of thick (about 7 micron) photoresist is an effective mask under these conditions. 22 refs.</description><identifier>ISSN: 0013-4651</identifier><identifier>EISSN: 1945-7111</identifier><identifier>DOI: 10.1149/1.1392549</identifier><identifier>CODEN: JESOAN</identifier><language>eng</language><publisher>Pennington, NJ: Electrochemical Society</publisher><subject>Applied sciences ; Cross-disciplinary physics: materials science; rheology ; Electronics ; Exact sciences and technology ; Lithography, masks and pattern transfer ; Materials science ; Microelectronic fabrication (materials and surfaces technology) ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Surface cleaning, etching, patterning ; Surface treatments</subject><ispartof>Journal of the Electrochemical Society, 1999-10, Vol.146 (10), p.3778-3782</ispartof><rights>2000 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c322t-d181324bc0f2f1c41f95b8f5a101d2af6fcbf194adc72a62593733e61c608eeb3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=1180303$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><contributor>WCA</contributor><creatorcontrib>LEE, K. P</creatorcontrib><creatorcontrib>JUNG, K. B</creatorcontrib><creatorcontrib>A.SRIVASTAVA</creatorcontrib><creatorcontrib>KUMAR, D</creatorcontrib><creatorcontrib>SINGH, R. K</creatorcontrib><creatorcontrib>PEARTON, S. J</creatorcontrib><title>Dry etching of BaSrTiO3 and LaNiO3 thin films in inductively coupled plasmas</title><title>Journal of the Electrochemical Society</title><description>High density plasma etching of (Ba,Sr)TiO3 (BST) and LaNiO3 (LNO) thin films was performed in two different plasma chemistries, Cl2/Ar and CH4/H2/Ar. While the latter chemistry produced extremely low etch rates (less than or equal to 10 nm/min) under all conditions, the Cl2/Ar produced smooth anisotropic pattern transfer. The etching was still strongly ion-assisted, but maximum removal rates of about 90 nm/min for both materials were achieved with selectivities of about 16 for BST and about 7 for LNO over Si. A single layer of thick (about 7 micron) photoresist is an effective mask under these conditions. 22 refs.</description><subject>Applied sciences</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Lithography, masks and pattern transfer</subject><subject>Materials science</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Surface cleaning, etching, patterning</subject><subject>Surface treatments</subject><issn>0013-4651</issn><issn>1945-7111</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNpFkEtLxDAUhYMoOI4u_AdZiOCiY27SV5Y6PqE4C8d1uU0TjaQPk1bov7fDDLi653K_ezgcQi6BrQBieQsrEJInsTwiC5BxEmUAcEwWjIGI4jSBU3IWwve8Qh5nC1I8-InqQX3Z9pN2ht7ju9_ajaDY1rTAt50c5iM11jWBzsK29agG-6vdRFU39k7XtHcYGgzn5MSgC_riMJfk4-lxu36Jis3z6_quiJTgfIhqyEHwuFLMcAMqBiOTKjcJAoOao0mNqswcHmuVcUx5IkUmhE5BpSzXuhJLcr337X33M-owlI0NSjuHre7GUPJUCgaZnMGbPah8F4LXpuy9bdBPJbBy11cJ5aGvmb06mGJQ6IzHVtnw_wA5E0yIPyOyaD4</recordid><startdate>19991001</startdate><enddate>19991001</enddate><creator>LEE, K. P</creator><creator>JUNG, K. B</creator><creator>A.SRIVASTAVA</creator><creator>KUMAR, D</creator><creator>SINGH, R. K</creator><creator>PEARTON, S. J</creator><general>Electrochemical Society</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>19991001</creationdate><title>Dry etching of BaSrTiO3 and LaNiO3 thin films in inductively coupled plasmas</title><author>LEE, K. P ; JUNG, K. B ; A.SRIVASTAVA ; KUMAR, D ; SINGH, R. K ; PEARTON, S. J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c322t-d181324bc0f2f1c41f95b8f5a101d2af6fcbf194adc72a62593733e61c608eeb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Applied sciences</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Lithography, masks and pattern transfer</topic><topic>Materials science</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Physics</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Surface cleaning, etching, patterning</topic><topic>Surface treatments</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>LEE, K. P</creatorcontrib><creatorcontrib>JUNG, K. B</creatorcontrib><creatorcontrib>A.SRIVASTAVA</creatorcontrib><creatorcontrib>KUMAR, D</creatorcontrib><creatorcontrib>SINGH, R. K</creatorcontrib><creatorcontrib>PEARTON, S. J</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>LEE, K. P</au><au>JUNG, K. B</au><au>A.SRIVASTAVA</au><au>KUMAR, D</au><au>SINGH, R. K</au><au>PEARTON, S. J</au><au>WCA</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dry etching of BaSrTiO3 and LaNiO3 thin films in inductively coupled plasmas</atitle><jtitle>Journal of the Electrochemical Society</jtitle><date>1999-10-01</date><risdate>1999</risdate><volume>146</volume><issue>10</issue><spage>3778</spage><epage>3782</epage><pages>3778-3782</pages><issn>0013-4651</issn><eissn>1945-7111</eissn><coden>JESOAN</coden><abstract>High density plasma etching of (Ba,Sr)TiO3 (BST) and LaNiO3 (LNO) thin films was performed in two different plasma chemistries, Cl2/Ar and CH4/H2/Ar. While the latter chemistry produced extremely low etch rates (less than or equal to 10 nm/min) under all conditions, the Cl2/Ar produced smooth anisotropic pattern transfer. The etching was still strongly ion-assisted, but maximum removal rates of about 90 nm/min for both materials were achieved with selectivities of about 16 for BST and about 7 for LNO over Si. A single layer of thick (about 7 micron) photoresist is an effective mask under these conditions. 22 refs.</abstract><cop>Pennington, NJ</cop><pub>Electrochemical Society</pub><doi>10.1149/1.1392549</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0013-4651 |
ispartof | Journal of the Electrochemical Society, 1999-10, Vol.146 (10), p.3778-3782 |
issn | 0013-4651 1945-7111 |
language | eng |
recordid | cdi_proquest_miscellaneous_26930179 |
source | IOP Publishing Journals |
subjects | Applied sciences Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Lithography, masks and pattern transfer Materials science Microelectronic fabrication (materials and surfaces technology) Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Surface cleaning, etching, patterning Surface treatments |
title | Dry etching of BaSrTiO3 and LaNiO3 thin films in inductively coupled plasmas |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-21T16%3A51%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Dry%20etching%20of%20BaSrTiO3%20and%20LaNiO3%20thin%20films%20in%20inductively%20coupled%20plasmas&rft.jtitle=Journal%20of%20the%20Electrochemical%20Society&rft.au=LEE,%20K.%20P&rft.date=1999-10-01&rft.volume=146&rft.issue=10&rft.spage=3778&rft.epage=3782&rft.pages=3778-3782&rft.issn=0013-4651&rft.eissn=1945-7111&rft.coden=JESOAN&rft_id=info:doi/10.1149/1.1392549&rft_dat=%3Cproquest_cross%3E26930179%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=26930179&rft_id=info:pmid/&rfr_iscdi=true |