FIB voltage contrast measurement for enhanced circuit repairs
Recent planar technologies with 3 metal layers or more challenge current physical design modification capacities using Focused Ion Beam tools. Image visibility on the FIB is drastically reduced, making accurate positioning and milling operations in the area of interest more difficult. Despite the co...
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Veröffentlicht in: | Microelectronics and reliability 1999, Vol.39 (6), p.1003-1008 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Recent planar technologies with 3 metal layers or more challenge current physical design modification capacities using Focused Ion Beam tools. Image visibility on the FIB is drastically reduced, making accurate positioning and milling operations in the area of interest more difficult. Despite the complexity of FIB modifications, however, the demand for circuit modifications continues to increase. We will present a method which brings voltage contrast measurement capabilities to FIB systems. With this method, it is possible to verify the completion of FIB repairs. |
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ISSN: | 0026-2714 1872-941X |
DOI: | 10.1016/S0026-2714(99)00138-9 |