Dielectric function of wurtzite GaN and AlN thin films

Measurements and calculations of the dielectric function of wurtzite GaN and AlN are presented. Spectroscopic ellipsometry was used to determine ϵ( ω) of thin film samples in the energy range from 3 to 9.8 eV. Calculations of ϵ( ω) for the bulk materials were performed within a first-principles elec...

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Veröffentlicht in:	Solid state communications 1999-09, Vol.112 (3), p.129-133
Hauptverfasser:	Benedict, L.X., Wethkamp, T., Wilmers, K., Cobet, C., Esser, N., Shirley, E.L., Richter, W., Cardona, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	A. Semiconductors Condensed matter: electronic structure, electrical, magnetic, and optical properties D. Electronic band structure D. Optical properties E. Synchrotron radiation Exact sciences and technology Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity) Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Physics
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container_end_page	133
container_issue	3
container_start_page	129
container_title	Solid state communications
container_volume	112
creator	Benedict, L.X. Wethkamp, T. Wilmers, K. Cobet, C. Esser, N. Shirley, E.L. Richter, W. Cardona, M.
description	Measurements and calculations of the dielectric function of wurtzite GaN and AlN are presented. Spectroscopic ellipsometry was used to determine ϵ( ω) of thin film samples in the energy range from 3 to 9.8 eV. Calculations of ϵ( ω) for the bulk materials were performed within a first-principles electronic structure scheme that includes the electron–hole interaction. The agreement between experiment and theory is dramatically improved over the previous work, a result of improvements in both experimental technique and theoretical description. The predicted polarization dependence of the dielectric function of these materials exhibits features similar to that in other wurtzite structure materials.
doi_str_mv	10.1016/S0038-1098(99)00323-3
format	Article
fullrecord	<record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_26922976</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0038109899003233</els_id><sourcerecordid>26922976</sourcerecordid><originalsourceid>FETCH-LOGICAL-c348t-bce109ba876d7652c55a68422e5a9a09ed9c0c769723eab40e4bbee5a7a95cd73</originalsourceid><addsrcrecordid>eNqFkEFLwzAUx4MoOKcfQchBRA_VJG2T5iRj6hTGPKjnkL6-YqRrZ9Iq-unN3NCjp_DI7__-vB8hx5xdcMbl5SNjaZFwposzrc_jINIk3SEjXiidCCXlLhn9IvvkIIRXxpgqFB8Ree2wQei9A1oPLfSua2lX04_B91-uRzqzC2rbik6aBe1fXEtr1yzDIdmrbRPwaPuOyfPtzdP0Lpk_zO6nk3kCaVb0SQkYO0tbKFkpmQvIcyuLTAjMrbZMY6WBgZJaiRRtmTHMyhLjp7I6h0qlY3K62bvy3duAoTdLFwCbxrbYDcEIqYXQSkYw34DguxA81mbl3dL6T8OZWVsyP5bMWoHR2vxYMmnMnWwLbADb1N624MJfWPM8RiJ2tcEwHvvu0JsADlvAyvloz1Sd-6foGye2eq0</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>26922976</pqid></control><display><type>article</type><title>Dielectric function of wurtzite GaN and AlN thin films</title><source>Elsevier ScienceDirect Journals</source><creator>Benedict, L.X. ; Wethkamp, T. ; Wilmers, K. ; Cobet, C. ; Esser, N. ; Shirley, E.L. ; Richter, W. ; Cardona, M.</creator><creatorcontrib>Benedict, L.X. ; Wethkamp, T. ; Wilmers, K. ; Cobet, C. ; Esser, N. ; Shirley, E.L. ; Richter, W. ; Cardona, M.</creatorcontrib><description>Measurements and calculations of the dielectric function of wurtzite GaN and AlN are presented. Spectroscopic ellipsometry was used to determine ϵ( ω) of thin film samples in the energy range from 3 to 9.8 eV. Calculations of ϵ( ω) for the bulk materials were performed within a first-principles electronic structure scheme that includes the electron–hole interaction. The agreement between experiment and theory is dramatically improved over the previous work, a result of improvements in both experimental technique and theoretical description. The predicted polarization dependence of the dielectric function of these materials exhibits features similar to that in other wurtzite structure materials.</description><identifier>ISSN: 0038-1098</identifier><identifier>EISSN: 1879-2766</identifier><identifier>DOI: 10.1016/S0038-1098(99)00323-3</identifier><identifier>CODEN: SSCOA4</identifier><language>eng</language><publisher>Oxford: Elsevier Ltd</publisher><subject>A. Semiconductors ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; D. Electronic band structure ; D. Optical properties ; E. Synchrotron radiation ; Exact sciences and technology ; Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity) ; Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of bulk materials and thin films ; Physics</subject><ispartof>Solid state communications, 1999-09, Vol.112 (3), p.129-133</ispartof><rights>1999 Elsevier Science Ltd</rights><rights>1999 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c348t-bce109ba876d7652c55a68422e5a9a09ed9c0c769723eab40e4bbee5a7a95cd73</citedby><cites>FETCH-LOGICAL-c348t-bce109ba876d7652c55a68422e5a9a09ed9c0c769723eab40e4bbee5a7a95cd73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0038109899003233$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=1915109$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Benedict, L.X.</creatorcontrib><creatorcontrib>Wethkamp, T.</creatorcontrib><creatorcontrib>Wilmers, K.</creatorcontrib><creatorcontrib>Cobet, C.</creatorcontrib><creatorcontrib>Esser, N.</creatorcontrib><creatorcontrib>Shirley, E.L.</creatorcontrib><creatorcontrib>Richter, W.</creatorcontrib><creatorcontrib>Cardona, M.</creatorcontrib><title>Dielectric function of wurtzite GaN and AlN thin films</title><title>Solid state communications</title><description>Measurements and calculations of the dielectric function of wurtzite GaN and AlN are presented. Spectroscopic ellipsometry was used to determine ϵ( ω) of thin film samples in the energy range from 3 to 9.8 eV. Calculations of ϵ( ω) for the bulk materials were performed within a first-principles electronic structure scheme that includes the electron–hole interaction. The agreement between experiment and theory is dramatically improved over the previous work, a result of improvements in both experimental technique and theoretical description. The predicted polarization dependence of the dielectric function of these materials exhibits features similar to that in other wurtzite structure materials.</description><subject>A. Semiconductors</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>D. Electronic band structure</subject><subject>D. Optical properties</subject><subject>E. Synchrotron radiation</subject><subject>Exact sciences and technology</subject><subject>Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)</subject><subject>Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of bulk materials and thin films</subject><subject>Physics</subject><issn>0038-1098</issn><issn>1879-2766</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNqFkEFLwzAUx4MoOKcfQchBRA_VJG2T5iRj6hTGPKjnkL6-YqRrZ9Iq-unN3NCjp_DI7__-vB8hx5xdcMbl5SNjaZFwposzrc_jINIk3SEjXiidCCXlLhn9IvvkIIRXxpgqFB8Ree2wQei9A1oPLfSua2lX04_B91-uRzqzC2rbik6aBe1fXEtr1yzDIdmrbRPwaPuOyfPtzdP0Lpk_zO6nk3kCaVb0SQkYO0tbKFkpmQvIcyuLTAjMrbZMY6WBgZJaiRRtmTHMyhLjp7I6h0qlY3K62bvy3duAoTdLFwCbxrbYDcEIqYXQSkYw34DguxA81mbl3dL6T8OZWVsyP5bMWoHR2vxYMmnMnWwLbADb1N624MJfWPM8RiJ2tcEwHvvu0JsADlvAyvloz1Sd-6foGye2eq0</recordid><startdate>199909</startdate><enddate>199909</enddate><creator>Benedict, L.X.</creator><creator>Wethkamp, T.</creator><creator>Wilmers, K.</creator><creator>Cobet, C.</creator><creator>Esser, N.</creator><creator>Shirley, E.L.</creator><creator>Richter, W.</creator><creator>Cardona, M.</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>199909</creationdate><title>Dielectric function of wurtzite GaN and AlN thin films</title><author>Benedict, L.X. ; Wethkamp, T. ; Wilmers, K. ; Cobet, C. ; Esser, N. ; Shirley, E.L. ; Richter, W. ; Cardona, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c348t-bce109ba876d7652c55a68422e5a9a09ed9c0c769723eab40e4bbee5a7a95cd73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><topic>A. Semiconductors</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>D. Electronic band structure</topic><topic>D. Optical properties</topic><topic>E. Synchrotron radiation</topic><topic>Exact sciences and technology</topic><topic>Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)</topic><topic>Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of bulk materials and thin films</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Benedict, L.X.</creatorcontrib><creatorcontrib>Wethkamp, T.</creatorcontrib><creatorcontrib>Wilmers, K.</creatorcontrib><creatorcontrib>Cobet, C.</creatorcontrib><creatorcontrib>Esser, N.</creatorcontrib><creatorcontrib>Shirley, E.L.</creatorcontrib><creatorcontrib>Richter, W.</creatorcontrib><creatorcontrib>Cardona, M.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solid state communications</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Benedict, L.X.</au><au>Wethkamp, T.</au><au>Wilmers, K.</au><au>Cobet, C.</au><au>Esser, N.</au><au>Shirley, E.L.</au><au>Richter, W.</au><au>Cardona, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dielectric function of wurtzite GaN and AlN thin films</atitle><jtitle>Solid state communications</jtitle><date>1999-09</date><risdate>1999</risdate><volume>112</volume><issue>3</issue><spage>129</spage><epage>133</epage><pages>129-133</pages><issn>0038-1098</issn><eissn>1879-2766</eissn><coden>SSCOA4</coden><abstract>Measurements and calculations of the dielectric function of wurtzite GaN and AlN are presented. Spectroscopic ellipsometry was used to determine ϵ( ω) of thin film samples in the energy range from 3 to 9.8 eV. Calculations of ϵ( ω) for the bulk materials were performed within a first-principles electronic structure scheme that includes the electron–hole interaction. The agreement between experiment and theory is dramatically improved over the previous work, a result of improvements in both experimental technique and theoretical description. The predicted polarization dependence of the dielectric function of these materials exhibits features similar to that in other wurtzite structure materials.</abstract><cop>Oxford</cop><pub>Elsevier Ltd</pub><doi>10.1016/S0038-1098(99)00323-3</doi><tpages>5</tpages></addata></record>
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subjects	A. Semiconductors Condensed matter: electronic structure, electrical, magnetic, and optical properties D. Electronic band structure D. Optical properties E. Synchrotron radiation Exact sciences and technology Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity) Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Physics
title	Dielectric function of wurtzite GaN and AlN thin films
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T01%3A04%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Dielectric%20function%20of%20wurtzite%20GaN%20and%20AlN%20thin%20films&rft.jtitle=Solid%20state%20communications&rft.au=Benedict,%20L.X.&rft.date=1999-09&rft.volume=112&rft.issue=3&rft.spage=129&rft.epage=133&rft.pages=129-133&rft.issn=0038-1098&rft.eissn=1879-2766&rft.coden=SSCOA4&rft_id=info:doi/10.1016/S0038-1098(99)00323-3&rft_dat=%3Cproquest_cross%3E26922976%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=26922976&rft_id=info:pmid/&rft_els_id=S0038109899003233&rfr_iscdi=true