The deposition of oriented diamond film by hot-filament chemical vapor deposition with separate reactant gas
A (110)-oriented diamond film was deposited by hot filament chemical vapor deposition with H2 and CH4 separately introduced into the reactive zone. The film with a degree of orientation I(220)/I(111) of more than 200% and deposition rate of 2–3 μm/h was obtained for a deposition time of 17 h. The lo...
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| Veröffentlicht in: | Journal of materials research 1999-08, Vol.14 (8), p.3196-3199 |
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| container_title | Journal of materials research |
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| creator | Chen, G. C. Sun, C. Huang, R. F. Wen, L. S. Jiang, D. Y. Yao, X. Z. |
| description | A (110)-oriented diamond film was deposited by hot filament chemical vapor deposition with H2 and CH4 separately introduced into the reactive zone. The film with a degree of orientation I(220)/I(111) of more than 200% and deposition rate of 2–3 μm/h was obtained for a deposition time of 17 h. The long deposition time enlarged the grain size and enhanced the degree of orientation, but too long a deposition time resulted in random growth. The temperature field was measured and also calculated using a simple model. Both results showed that a temperature field existed with varied gradients along the normal of substrate surface. The (110)-oriented diamond film was deposited in the zone with negative temperature gradient. The change in orientation occurring for long deposition times was ascribed to the change of temperature gradient. |
| doi_str_mv | 10.1557/JMR.1999.0430 |
| format | Article |
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| title | The deposition of oriented diamond film by hot-filament chemical vapor deposition with separate reactant gas |
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