Epitaxial growth and self-organized superlattice structures in AlGaN films grown by plasma assisted molecular beam epitaxy
Aluminum gallium nitride alloys were grown by molecular beam epitaxy and their film composition, structure and microstructure were investigated by Rutherford backscattering spectroscopy, Atomic Force Microscopy, X-ray diffraction, Transmission Electron Microscopy and High Resolution Electron Microsc...
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Veröffentlicht in: | Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2001-12, Vol.87 (3), p.227-236 |
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Sprache: | eng |
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