Doping of 6H–SiC pn structures by proton irradiation

The influence of proton irradiation on current–voltage characteristics, N d − N a values and parameters of deep centres in 6H–SiC pn structures grown by sublimation epitaxy has been studied. The irradiation was carried out with 8 MeV protons in the range of doses from 10 14 to 10 16 cm −2. Irradiati...

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Veröffentlicht in:	Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 1999, Vol.147 (1), p.74-78
Hauptverfasser:	Strel’chuk, Anatoly M, Lebedev, Alexandre A, Kozlovski, Vitali V, Savkina, Natali S, Davydov, Denis V, Solov’ev, Viktor V, Rastegaeva, Marina G
Format:	Artikel
Sprache:	eng
Schlagworte:	6H–SiC Compensation Lifetimes overcompensation Proton irradiation
Online-Zugang:	Volltext
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