Corrosion Resistance of Tantalum-Oxide Films Deposited by PLD
Tantalum-oxide films were deposited on SUS304 by PLD under O2 gas and 5 mass% O3 gas at room temperature. Effects of atomic ratio of O/Ta and Ta-O binding state on corrosion resistance of tantalum-oxide films were investigated systematically. Corrosion resistance of the films was examined by the mea...
Gespeichert in:
| Veröffentlicht in: | Journal of the Society of Materials Science, Japan Japan, 1999/07/15, Vol.48(7), pp.777-782 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | jpn |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 782 |
|---|---|
| container_issue | 7 |
| container_start_page | 777 |
| container_title | Journal of the Society of Materials Science, Japan |
| container_volume | 48 |
| creator | HINO, Takanori NISHIDA, Minoru ARAKI, Takao OOIE, Toshihiko YANO, Tetsuo YONEDA, Masafumi KATSUMURA, Munehide |
| description | Tantalum-oxide films were deposited on SUS304 by PLD under O2 gas and 5 mass% O3 gas at room temperature. Effects of atomic ratio of O/Ta and Ta-O binding state on corrosion resistance of tantalum-oxide films were investigated systematically. Corrosion resistance of the films was examined by the measurement of anodic polarization curve in 3.5 mass% NaCl solution. The penetrated potential of the films deposited under O2 gas as well as 5 mass% O3 became higher with the atomic ratio of O/Ta increased. The film deposited under 5 mass% O3 gas at 10Pa had excellent corrosion resistance equal to Ta plate. Moreover, in order to evaluate of corrosion process, anodic polarization test was examined up to 200mV. The pits depth of the films deposited under 5 mass% O3 gas was shallower than that under O2 gas because of its stable Ta-O combination. |
| doi_str_mv | 10.2472/jsms.48.777 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_26901054</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>26901054</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3617-a536f38b17730bb48d4c04fb62556075ff648a8310d153088be106ee8ca906053</originalsourceid><addsrcrecordid>eNpFkE1LAzEQhoMoWGpP_oE9iBfZOtl87sGDtFaFQkXqOWSzWU3Zj5pswf57027Ry8zhfeaBeRG6xjDNqMjuN6EJUyqnQogzNMJSQiqolOdoBAzTlGFOLtEkBFcAZFlGJM1H6GHWed8F17XJuw0u9Lo1NumqZK3bXte7Jl39uNImC1c3IZnbbWR7WybFPnlbzq_QRaXrYCenPUYfi6f17CVdrp5fZ4_L1BCORaoZ4RWRBRaCQFFQWVIDtCp4xhgHwaqKU6klwVBiRkDKwmLg1kqjc-DAyBjdDt6t7753NvSqccHYutat7XZBZTwHDIxG8G4ATXwqeFuprXeN9nuFQR1aUoeWFJUqthTpm5NWB6PrysfnXfg_yXn08ojNB2wT6_m0f7n2vTO1PSojS47aYUT7X2y-tFe2Jb9u0H36</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>26901054</pqid></control><display><type>article</type><title>Corrosion Resistance of Tantalum-Oxide Films Deposited by PLD</title><source>J-STAGE Free</source><creator>HINO, Takanori ; NISHIDA, Minoru ; ARAKI, Takao ; OOIE, Toshihiko ; YANO, Tetsuo ; YONEDA, Masafumi ; KATSUMURA, Munehide</creator><creatorcontrib>HINO, Takanori ; NISHIDA, Minoru ; ARAKI, Takao ; OOIE, Toshihiko ; YANO, Tetsuo ; YONEDA, Masafumi ; KATSUMURA, Munehide</creatorcontrib><description>Tantalum-oxide films were deposited on SUS304 by PLD under O2 gas and 5 mass% O3 gas at room temperature. Effects of atomic ratio of O/Ta and Ta-O binding state on corrosion resistance of tantalum-oxide films were investigated systematically. Corrosion resistance of the films was examined by the measurement of anodic polarization curve in 3.5 mass% NaCl solution. The penetrated potential of the films deposited under O2 gas as well as 5 mass% O3 became higher with the atomic ratio of O/Ta increased. The film deposited under 5 mass% O3 gas at 10Pa had excellent corrosion resistance equal to Ta plate. Moreover, in order to evaluate of corrosion process, anodic polarization test was examined up to 200mV. The pits depth of the films deposited under 5 mass% O3 gas was shallower than that under O2 gas because of its stable Ta-O combination.</description><identifier>ISSN: 0514-5163</identifier><identifier>EISSN: 1880-7488</identifier><identifier>DOI: 10.2472/jsms.48.777</identifier><identifier>CODEN: ZARYAQ</identifier><language>jpn</language><publisher>Kyoto: The Society of Materials Science, Japan</publisher><subject>Corrosion resistance ; O/Ta ; Pulsed laser deposition ; Ta-O combination ; Tantalum-oxide film</subject><ispartof>Journal of the Society of Materials Science, Japan, 1999/07/15, Vol.48(7), pp.777-782</ispartof><rights>by The Society of Materials Science, Japan</rights><rights>1999 INIST-CNRS</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3617-a536f38b17730bb48d4c04fb62556075ff648a8310d153088be106ee8ca906053</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,1877,4010,27900,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=1966906$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>HINO, Takanori</creatorcontrib><creatorcontrib>NISHIDA, Minoru</creatorcontrib><creatorcontrib>ARAKI, Takao</creatorcontrib><creatorcontrib>OOIE, Toshihiko</creatorcontrib><creatorcontrib>YANO, Tetsuo</creatorcontrib><creatorcontrib>YONEDA, Masafumi</creatorcontrib><creatorcontrib>KATSUMURA, Munehide</creatorcontrib><title>Corrosion Resistance of Tantalum-Oxide Films Deposited by PLD</title><title>Journal of the Society of Materials Science, Japan</title><addtitle>J. Soc. Mat. Sci., Japan</addtitle><description>Tantalum-oxide films were deposited on SUS304 by PLD under O2 gas and 5 mass% O3 gas at room temperature. Effects of atomic ratio of O/Ta and Ta-O binding state on corrosion resistance of tantalum-oxide films were investigated systematically. Corrosion resistance of the films was examined by the measurement of anodic polarization curve in 3.5 mass% NaCl solution. The penetrated potential of the films deposited under O2 gas as well as 5 mass% O3 became higher with the atomic ratio of O/Ta increased. The film deposited under 5 mass% O3 gas at 10Pa had excellent corrosion resistance equal to Ta plate. Moreover, in order to evaluate of corrosion process, anodic polarization test was examined up to 200mV. The pits depth of the films deposited under 5 mass% O3 gas was shallower than that under O2 gas because of its stable Ta-O combination.</description><subject>Corrosion resistance</subject><subject>O/Ta</subject><subject>Pulsed laser deposition</subject><subject>Ta-O combination</subject><subject>Tantalum-oxide film</subject><issn>0514-5163</issn><issn>1880-7488</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNpFkE1LAzEQhoMoWGpP_oE9iBfZOtl87sGDtFaFQkXqOWSzWU3Zj5pswf57027Ry8zhfeaBeRG6xjDNqMjuN6EJUyqnQogzNMJSQiqolOdoBAzTlGFOLtEkBFcAZFlGJM1H6GHWed8F17XJuw0u9Lo1NumqZK3bXte7Jl39uNImC1c3IZnbbWR7WybFPnlbzq_QRaXrYCenPUYfi6f17CVdrp5fZ4_L1BCORaoZ4RWRBRaCQFFQWVIDtCp4xhgHwaqKU6klwVBiRkDKwmLg1kqjc-DAyBjdDt6t7753NvSqccHYutat7XZBZTwHDIxG8G4ATXwqeFuprXeN9nuFQR1aUoeWFJUqthTpm5NWB6PrysfnXfg_yXn08ojNB2wT6_m0f7n2vTO1PSojS47aYUT7X2y-tFe2Jb9u0H36</recordid><startdate>1999</startdate><enddate>1999</enddate><creator>HINO, Takanori</creator><creator>NISHIDA, Minoru</creator><creator>ARAKI, Takao</creator><creator>OOIE, Toshihiko</creator><creator>YANO, Tetsuo</creator><creator>YONEDA, Masafumi</creator><creator>KATSUMURA, Munehide</creator><general>The Society of Materials Science, Japan</general><general>Society of Materials Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SE</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>1999</creationdate><title>Corrosion Resistance of Tantalum-Oxide Films Deposited by PLD</title><author>HINO, Takanori ; NISHIDA, Minoru ; ARAKI, Takao ; OOIE, Toshihiko ; YANO, Tetsuo ; YONEDA, Masafumi ; KATSUMURA, Munehide</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3617-a536f38b17730bb48d4c04fb62556075ff648a8310d153088be106ee8ca906053</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>jpn</language><creationdate>1999</creationdate><topic>Corrosion resistance</topic><topic>O/Ta</topic><topic>Pulsed laser deposition</topic><topic>Ta-O combination</topic><topic>Tantalum-oxide film</topic><toplevel>online_resources</toplevel><creatorcontrib>HINO, Takanori</creatorcontrib><creatorcontrib>NISHIDA, Minoru</creatorcontrib><creatorcontrib>ARAKI, Takao</creatorcontrib><creatorcontrib>OOIE, Toshihiko</creatorcontrib><creatorcontrib>YANO, Tetsuo</creatorcontrib><creatorcontrib>YONEDA, Masafumi</creatorcontrib><creatorcontrib>KATSUMURA, Munehide</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Corrosion Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of the Society of Materials Science, Japan</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>HINO, Takanori</au><au>NISHIDA, Minoru</au><au>ARAKI, Takao</au><au>OOIE, Toshihiko</au><au>YANO, Tetsuo</au><au>YONEDA, Masafumi</au><au>KATSUMURA, Munehide</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Corrosion Resistance of Tantalum-Oxide Films Deposited by PLD</atitle><jtitle>Journal of the Society of Materials Science, Japan</jtitle><addtitle>J. Soc. Mat. Sci., Japan</addtitle><date>1999</date><risdate>1999</risdate><volume>48</volume><issue>7</issue><spage>777</spage><epage>782</epage><pages>777-782</pages><issn>0514-5163</issn><eissn>1880-7488</eissn><coden>ZARYAQ</coden><abstract>Tantalum-oxide films were deposited on SUS304 by PLD under O2 gas and 5 mass% O3 gas at room temperature. Effects of atomic ratio of O/Ta and Ta-O binding state on corrosion resistance of tantalum-oxide films were investigated systematically. Corrosion resistance of the films was examined by the measurement of anodic polarization curve in 3.5 mass% NaCl solution. The penetrated potential of the films deposited under O2 gas as well as 5 mass% O3 became higher with the atomic ratio of O/Ta increased. The film deposited under 5 mass% O3 gas at 10Pa had excellent corrosion resistance equal to Ta plate. Moreover, in order to evaluate of corrosion process, anodic polarization test was examined up to 200mV. The pits depth of the films deposited under 5 mass% O3 gas was shallower than that under O2 gas because of its stable Ta-O combination.</abstract><cop>Kyoto</cop><pub>The Society of Materials Science, Japan</pub><doi>10.2472/jsms.48.777</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0514-5163 |
| ispartof | Journal of the Society of Materials Science, Japan, 1999/07/15, Vol.48(7), pp.777-782 |
| issn | 0514-5163 1880-7488 |
| language | jpn |
| recordid | cdi_proquest_miscellaneous_26901054 |
| source | J-STAGE Free |
| subjects | Corrosion resistance O/Ta Pulsed laser deposition Ta-O combination Tantalum-oxide film |
| title | Corrosion Resistance of Tantalum-Oxide Films Deposited by PLD |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T20%3A12%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Corrosion%20Resistance%20of%20Tantalum-Oxide%20Films%20Deposited%20by%20PLD&rft.jtitle=Journal%20of%20the%20Society%20of%20Materials%20Science,%20Japan&rft.au=HINO,%20Takanori&rft.date=1999&rft.volume=48&rft.issue=7&rft.spage=777&rft.epage=782&rft.pages=777-782&rft.issn=0514-5163&rft.eissn=1880-7488&rft.coden=ZARYAQ&rft_id=info:doi/10.2472/jsms.48.777&rft_dat=%3Cproquest_cross%3E26901054%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=26901054&rft_id=info:pmid/&rfr_iscdi=true |