Optical emission spectroscopy study toward high rate growth of microcrystalline silicon

A systematic optical emission spectroscopy (OES) study was carried out to enhance the deposition rate of microcrystalline silicon (μc-Si:H) with conventional r.f. plasma-enhanced chemical vapor deposition (r.f. PECVD). Among the various plasma parameters, the combination of total pressure, r.f. powe...

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Veröffentlicht in:	Thin solid films 2001-05, Vol.386 (2), p.256-260
Hauptverfasser:	Fukuda, Yusuke, Sakuma, Yoshikazu, Fukai, Chisato, Fujimura, Yukihiro, Azuma, Kazufumi, Shirai, Hajime
Format:	Artikel
Sprache:	eng
Schlagworte:	Cathode heating Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Electrode distance Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Optical emission spectroscopy (OES) Physics Physics of gases, plasmas and electric discharges Physics of plasmas and electric discharges Plasma applications RF glow discharge SiH 4 μc-Si:H
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