Preparation of large uniform amorphous silicon films by VHF-PECVD using a ladder-shaped antenna
We have succeeded in preparing very uniform hydrogenated amorphous Si (a-Si/H) films by VHF plasma CVD at 60 MHz using as an electrode a ladder-shaped antenna. The rf power was applied to eight loading points on the ladder-shaped antenna. In order to supply equal rf power at the each loading point,...
Gespeichert in:
| Veröffentlicht in: | Thin solid films 2001-05, Vol.386 (2), p.133-136 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 136 |
|---|---|
| container_issue | 2 |
| container_start_page | 133 |
| container_title | Thin solid films |
| container_volume | 386 |
| creator | Takeuchi, Yoshiaki Nawata, Yoshikazu Ogawa, Kazuhiko Serizawa, Akira Yamauchi, Yasuhiro Murata, Masayoshi |
| description | We have succeeded in preparing very uniform hydrogenated amorphous Si (a-Si/H) films by VHF plasma CVD at 60 MHz using as an electrode a ladder-shaped antenna. The rf power was applied to eight loading points on the ladder-shaped antenna. In order to supply equal rf power at the each loading point, the power divider was introduced between the electrode and a matching box, which enables the distribution of the feeding rf power at the each point less than 10%. a-Si/H Films were deposited on 400×500-mm glass substrates using pure silane gas. Films produced by this method showed a uniformity of ±10% over the substrate with a high deposition rate of 1.5 nm/s. |
| doi_str_mv | 10.1016/S0040-6090(00)01663-1 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_26883579</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0040609000016631</els_id><sourcerecordid>26883579</sourcerecordid><originalsourceid>FETCH-LOGICAL-c432t-9019969a5d2f7c334829e5f6e6cfaa3d5bc2054d3595260ba8394106ee16a89c3</originalsourceid><addsrcrecordid>eNqFkF9LHTEQxYNU6K32IxQCQqkPq5NkN3fzVMr1LwgKWl_D3OxEU3az22Sv4Lc3t1d8LQwMDL8zZ-Yw9k3AiQChT-8Baqg0GPgBcFwmWlVijy1EuzSVXCrxiS0-kM_sS85_AEBIqRbM3iWaMOEcxshHz3tMT8Q3MfgxDRyHMU3P4ybzHPrgCuJDP2S-fuWPVxfV3fnq8YxvcohPHIu06yhV-Rkn6jjGmWLEQ7bvsc_09b0fsN8X5w-rq-rm9vJ69eumcrWSc2VAGKMNNp30S6dU3UpDjdeknUdUXbN2Epq6U41ppIY1tsrUAjSR0Ngapw7Y993eKY1_N5RnO4TsqO8xUrnfSt22qlmaAjY70KUx50TeTikMmF6tALuN0_6L026zslBqG6cVRXf0boDZYe8TRhfyh9gooVVbqJ87isqvL4GSzS5QdNSFRG623Rj-4_MG3IuIIg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>26883579</pqid></control><display><type>article</type><title>Preparation of large uniform amorphous silicon films by VHF-PECVD using a ladder-shaped antenna</title><source>Elsevier ScienceDirect Journals Complete</source><creator>Takeuchi, Yoshiaki ; Nawata, Yoshikazu ; Ogawa, Kazuhiko ; Serizawa, Akira ; Yamauchi, Yasuhiro ; Murata, Masayoshi</creator><creatorcontrib>Takeuchi, Yoshiaki ; Nawata, Yoshikazu ; Ogawa, Kazuhiko ; Serizawa, Akira ; Yamauchi, Yasuhiro ; Murata, Masayoshi</creatorcontrib><description>We have succeeded in preparing very uniform hydrogenated amorphous Si (a-Si/H) films by VHF plasma CVD at 60 MHz using as an electrode a ladder-shaped antenna. The rf power was applied to eight loading points on the ladder-shaped antenna. In order to supply equal rf power at the each loading point, the power divider was introduced between the electrode and a matching box, which enables the distribution of the feeding rf power at the each point less than 10%. a-Si/H Films were deposited on 400×500-mm glass substrates using pure silane gas. Films produced by this method showed a uniformity of ±10% over the substrate with a high deposition rate of 1.5 nm/s.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/S0040-6090(00)01663-1</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Amorphous Si films ; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Cross-disciplinary physics: materials science; rheology ; Deposition ; Exact sciences and technology ; Ladder-shaped antenna ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics ; VHF-PECVD</subject><ispartof>Thin solid films, 2001-05, Vol.386 (2), p.133-136</ispartof><rights>2001 Elsevier Science B.V.</rights><rights>2001 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c432t-9019969a5d2f7c334829e5f6e6cfaa3d5bc2054d3595260ba8394106ee16a89c3</citedby><cites>FETCH-LOGICAL-c432t-9019969a5d2f7c334829e5f6e6cfaa3d5bc2054d3595260ba8394106ee16a89c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S0040-6090(00)01663-1$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3550,23930,23931,25140,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=931638$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Takeuchi, Yoshiaki</creatorcontrib><creatorcontrib>Nawata, Yoshikazu</creatorcontrib><creatorcontrib>Ogawa, Kazuhiko</creatorcontrib><creatorcontrib>Serizawa, Akira</creatorcontrib><creatorcontrib>Yamauchi, Yasuhiro</creatorcontrib><creatorcontrib>Murata, Masayoshi</creatorcontrib><title>Preparation of large uniform amorphous silicon films by VHF-PECVD using a ladder-shaped antenna</title><title>Thin solid films</title><description>We have succeeded in preparing very uniform hydrogenated amorphous Si (a-Si/H) films by VHF plasma CVD at 60 MHz using as an electrode a ladder-shaped antenna. The rf power was applied to eight loading points on the ladder-shaped antenna. In order to supply equal rf power at the each loading point, the power divider was introduced between the electrode and a matching box, which enables the distribution of the feeding rf power at the each point less than 10%. a-Si/H Films were deposited on 400×500-mm glass substrates using pure silane gas. Films produced by this method showed a uniformity of ±10% over the substrate with a high deposition rate of 1.5 nm/s.</description><subject>Amorphous Si films</subject><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Deposition</subject><subject>Exact sciences and technology</subject><subject>Ladder-shaped antenna</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><subject>VHF-PECVD</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNqFkF9LHTEQxYNU6K32IxQCQqkPq5NkN3fzVMr1LwgKWl_D3OxEU3az22Sv4Lc3t1d8LQwMDL8zZ-Yw9k3AiQChT-8Baqg0GPgBcFwmWlVijy1EuzSVXCrxiS0-kM_sS85_AEBIqRbM3iWaMOEcxshHz3tMT8Q3MfgxDRyHMU3P4ybzHPrgCuJDP2S-fuWPVxfV3fnq8YxvcohPHIu06yhV-Rkn6jjGmWLEQ7bvsc_09b0fsN8X5w-rq-rm9vJ69eumcrWSc2VAGKMNNp30S6dU3UpDjdeknUdUXbN2Epq6U41ppIY1tsrUAjSR0Ngapw7Y993eKY1_N5RnO4TsqO8xUrnfSt22qlmaAjY70KUx50TeTikMmF6tALuN0_6L026zslBqG6cVRXf0boDZYe8TRhfyh9gooVVbqJ87isqvL4GSzS5QdNSFRG623Rj-4_MG3IuIIg</recordid><startdate>20010515</startdate><enddate>20010515</enddate><creator>Takeuchi, Yoshiaki</creator><creator>Nawata, Yoshikazu</creator><creator>Ogawa, Kazuhiko</creator><creator>Serizawa, Akira</creator><creator>Yamauchi, Yasuhiro</creator><creator>Murata, Masayoshi</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20010515</creationdate><title>Preparation of large uniform amorphous silicon films by VHF-PECVD using a ladder-shaped antenna</title><author>Takeuchi, Yoshiaki ; Nawata, Yoshikazu ; Ogawa, Kazuhiko ; Serizawa, Akira ; Yamauchi, Yasuhiro ; Murata, Masayoshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c432t-9019969a5d2f7c334829e5f6e6cfaa3d5bc2054d3595260ba8394106ee16a89c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Amorphous Si films</topic><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Deposition</topic><topic>Exact sciences and technology</topic><topic>Ladder-shaped antenna</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Physics</topic><topic>VHF-PECVD</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Takeuchi, Yoshiaki</creatorcontrib><creatorcontrib>Nawata, Yoshikazu</creatorcontrib><creatorcontrib>Ogawa, Kazuhiko</creatorcontrib><creatorcontrib>Serizawa, Akira</creatorcontrib><creatorcontrib>Yamauchi, Yasuhiro</creatorcontrib><creatorcontrib>Murata, Masayoshi</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Takeuchi, Yoshiaki</au><au>Nawata, Yoshikazu</au><au>Ogawa, Kazuhiko</au><au>Serizawa, Akira</au><au>Yamauchi, Yasuhiro</au><au>Murata, Masayoshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Preparation of large uniform amorphous silicon films by VHF-PECVD using a ladder-shaped antenna</atitle><jtitle>Thin solid films</jtitle><date>2001-05-15</date><risdate>2001</risdate><volume>386</volume><issue>2</issue><spage>133</spage><epage>136</epage><pages>133-136</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>We have succeeded in preparing very uniform hydrogenated amorphous Si (a-Si/H) films by VHF plasma CVD at 60 MHz using as an electrode a ladder-shaped antenna. The rf power was applied to eight loading points on the ladder-shaped antenna. In order to supply equal rf power at the each loading point, the power divider was introduced between the electrode and a matching box, which enables the distribution of the feeding rf power at the each point less than 10%. a-Si/H Films were deposited on 400×500-mm glass substrates using pure silane gas. Films produced by this method showed a uniformity of ±10% over the substrate with a high deposition rate of 1.5 nm/s.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/S0040-6090(00)01663-1</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0040-6090 |
| ispartof | Thin solid films, 2001-05, Vol.386 (2), p.133-136 |
| issn | 0040-6090 1879-2731 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_26883579 |
| source | Elsevier ScienceDirect Journals Complete |
| subjects | Amorphous Si films Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Deposition Exact sciences and technology Ladder-shaped antenna Materials science Methods of deposition of films and coatings film growth and epitaxy Physics VHF-PECVD |
| title | Preparation of large uniform amorphous silicon films by VHF-PECVD using a ladder-shaped antenna |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T06%3A04%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Preparation%20of%20large%20uniform%20amorphous%20silicon%20films%20by%20VHF-PECVD%20using%20a%20ladder-shaped%20antenna&rft.jtitle=Thin%20solid%20films&rft.au=Takeuchi,%20Yoshiaki&rft.date=2001-05-15&rft.volume=386&rft.issue=2&rft.spage=133&rft.epage=136&rft.pages=133-136&rft.issn=0040-6090&rft.eissn=1879-2731&rft.coden=THSFAP&rft_id=info:doi/10.1016/S0040-6090(00)01663-1&rft_dat=%3Cproquest_cross%3E26883579%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=26883579&rft_id=info:pmid/&rft_els_id=S0040609000016631&rfr_iscdi=true |