Chemical contribution of oxygen to silicon carbide plasma etching kinetics in a distributed electron cyclotron resonance (DECR) reactor
Etching experiments are performed in a distributed ECR reactor on both 3C- and 6H-SiC. An SF6/O2 gas mixture, F saturation conditions, and constant ion bombardment energy and flux are used, allowing the study of O2 contribution exclusively. In these conditions, results demonstrate the neutrality of...
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| Veröffentlicht in: | Journal of electronic materials 1999-03, Vol.28 (3), p.219-224 |
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| container_title | Journal of electronic materials |
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| creator | Lanois, Frédéric Planson, Dominique Locatelli, Marie-Laure Lassagne, Patrick Jaussaud, Claude Chante, Jean-Pierre |
| description | Etching experiments are performed in a distributed ECR reactor on both 3C- and 6H-SiC. An SF6/O2 gas mixture, F saturation conditions, and constant ion bombardment energy and flux are used, allowing the study of O2 contribution exclusively. In these conditions, results demonstrate the neutrality of O2 on SiC etching mechanisms. 21 refs. |
| doi_str_mv | 10.1007/s11664-999-0017-y |
| format | Article |
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| language | eng |
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| title | Chemical contribution of oxygen to silicon carbide plasma etching kinetics in a distributed electron cyclotron resonance (DECR) reactor |
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