A Novel P-Channel Flash Electrically-Erasable Programmable Read-Only Memory (EEPROM) Cell with Oxide-Nitride-Oxide (ONO) as Split Gate Channel Dielectric

A Novel P-Channel Flash Electrically-Erasable Programmable Read-Only Memory (EEPROM) Cell with Oxide-Nitride-Oxide (ONO) as Split Gate Channel Dielectric

A novel p-channel flash electrically-erasable programmable read-only memory (EEPROM) cell, which is programmed/erased via channel Fowler-Nordheim (FN) tunneling, is described in this paper. Channel FN tunneling is a high efficiency and low-power-consumption approach to flash cell operation. High end...

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Veröffentlicht in:Japanese Journal of Applied Physics 2001, Vol.40 (4S), p.2943-2947
Hauptverfasser: Huang, Chih-Jen, Liu, Yun-Chang, Wang, Mu-Chun, Caywood, John, Hong, Shi-Fang, Wu, Auter, Hsia, Liang-Chu, Chang, Yi-Jao, Liu, Fu-Tai
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container_end_page 2947
container_issue 4S
container_start_page 2943
container_title Japanese Journal of Applied Physics
container_volume 40
creator Huang, Chih-Jen
Liu, Yun-Chang
Wang, Mu-Chun
Caywood, John
Hong, Shi-Fang
Wu, Auter
Hsia, Liang-Chu
Chang, Yi-Jao
Liu, Fu-Tai
description A novel p-channel flash electrically-erasable programmable read-only memory (EEPROM) cell, which is programmed/erased via channel Fowler-Nordheim (FN) tunneling, is described in this paper. Channel FN tunneling is a high efficiency and low-power-consumption approach to flash cell operation. High endurance up to 1 M cycles was demonstrated with small window closure. The new flash cell exhibits good reliability which is quite insensitive to disturb or over program. In order to simplify the process, the interpoly dielectric and select gate dielectrics are fabricated using the same oxide-nitride-oxide (ONO) stack during formation of this cell. Hence, this cell shows good potential for achieving simple processing, low power consumption and negligible disturbance during operation.
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title A Novel P-Channel Flash Electrically-Erasable Programmable Read-Only Memory (EEPROM) Cell with Oxide-Nitride-Oxide (ONO) as Split Gate Channel Dielectric
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