Abnormal extracted value of effective channel length for off-set gate MOSFET

Effective channel length of off-set gate MOSFET was extracted as its substrate voltage was changed. It is found that the extracted value is abnormally large when the absolute substrate voltage is large. This phenomenon is explained by considering the off-set region as a fringe MOSFET and a JFET whic...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Solid-state electronics 1999, Vol.43 (4), p.829-831
Hauptverfasser:	Terada, Kazuo, Itoh, Kei-ichi, Tanaka, Koji
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!