Chemical bath deposition of indium sulphide thin films: preparation and characterization
Indium sulphide (In 2S 3) thin films have been successfully deposited on different substrates under varying deposition conditions using chemical bath deposition technique. The deposition mechanism of In 2S 3 thin films from thioacetamide deposition bath has been proposed. Films have been characteriz...
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| Veröffentlicht in: | Thin solid films 1999-02, Vol.340 (1), p.18-23 |
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| container_title | Thin solid films |
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| creator | Lokhande, C.D. Ennaoui, A. Patil, P.S. Giersig, M. Diesner, K. Muller, M. Tributsch, H. |
| description | Indium sulphide (In
2S
3) thin films have been successfully deposited on different substrates under varying deposition conditions using chemical bath deposition technique. The deposition mechanism of In
2S
3 thin films from thioacetamide deposition bath has been proposed. Films have been characterized with respect to their crystalline structure, composition, optical and electrical properties by means of X-ray diffraction, TEM, EDAX, optical absorption, TRMC (time resolved microwave conductivity) and RBS. Films on glass substrates were amorphous and on FTO (flourine doped tin oxide coated) glass substrates were polycrystalline (∈ phase). The optical band gap of In
2S
3 thin film was estimated to be 2.75 eV. The as-deposited films were photoactive as evidenced by TRMC studies. The presence of oxygen in the film was detected by RBS analysis. |
| doi_str_mv | 10.1016/S0040-6090(98)00980-8 |
| format | Article |
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2S
3) thin films have been successfully deposited on different substrates under varying deposition conditions using chemical bath deposition technique. The deposition mechanism of In
2S
3 thin films from thioacetamide deposition bath has been proposed. Films have been characterized with respect to their crystalline structure, composition, optical and electrical properties by means of X-ray diffraction, TEM, EDAX, optical absorption, TRMC (time resolved microwave conductivity) and RBS. Films on glass substrates were amorphous and on FTO (flourine doped tin oxide coated) glass substrates were polycrystalline (∈ phase). The optical band gap of In
2S
3 thin film was estimated to be 2.75 eV. The as-deposited films were photoactive as evidenced by TRMC studies. The presence of oxygen in the film was detected by RBS analysis.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/S0040-6090(98)00980-8</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Deposition process ; Exact sciences and technology ; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids) ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Optical properties ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of specific thin films ; Other semiconductors ; Physics ; Structural properties ; Sulphides</subject><ispartof>Thin solid films, 1999-02, Vol.340 (1), p.18-23</ispartof><rights>1999 Elsevier Science S.A.</rights><rights>1999 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c367t-75fa0cc2f2cf9b27ed4ab5c72659f7333f8ed1a23f455a7a159ed81a837b7ad93</citedby><cites>FETCH-LOGICAL-c367t-75fa0cc2f2cf9b27ed4ab5c72659f7333f8ed1a23f455a7a159ed81a837b7ad93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S0040-6090(98)00980-8$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=1704672$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Lokhande, C.D.</creatorcontrib><creatorcontrib>Ennaoui, A.</creatorcontrib><creatorcontrib>Patil, P.S.</creatorcontrib><creatorcontrib>Giersig, M.</creatorcontrib><creatorcontrib>Diesner, K.</creatorcontrib><creatorcontrib>Muller, M.</creatorcontrib><creatorcontrib>Tributsch, H.</creatorcontrib><title>Chemical bath deposition of indium sulphide thin films: preparation and characterization</title><title>Thin solid films</title><description>Indium sulphide (In
2S
3) thin films have been successfully deposited on different substrates under varying deposition conditions using chemical bath deposition technique. The deposition mechanism of In
2S
3 thin films from thioacetamide deposition bath has been proposed. Films have been characterized with respect to their crystalline structure, composition, optical and electrical properties by means of X-ray diffraction, TEM, EDAX, optical absorption, TRMC (time resolved microwave conductivity) and RBS. Films on glass substrates were amorphous and on FTO (flourine doped tin oxide coated) glass substrates were polycrystalline (∈ phase). The optical band gap of In
2S
3 thin film was estimated to be 2.75 eV. The as-deposited films were photoactive as evidenced by TRMC studies. The presence of oxygen in the film was detected by RBS analysis.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Deposition process</subject><subject>Exact sciences and technology</subject><subject>Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Optical properties</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of specific thin films</subject><subject>Other semiconductors</subject><subject>Physics</subject><subject>Structural properties</subject><subject>Sulphides</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNqFkEurFDEQRoMoOI7-BCELkeuitZJMdxI3chl8wYALFdyFmqRCR_pl0iN4f709PcN16aqo4nxV1GHsuYDXAkTz5ivADqoGLNxY8wrAGqjMA7YRRttKaiUess098pg9KeUnAAgp1Yb92LfUJ48dP-Lc8kDTWNKcxoGPkachpFPPy6mb2hSIz20aeExdX97yKdOEGVcUh8B9u3R-ppzu1uFT9ihiV-jZtW7Z9w_vv-0_VYcvHz_vbw-VV42eK11HBO9llD7ao9QUdnisvZZNbaNWSkVDQaBUcVfXqFHUloIRaJQ-agxWbdnLy94pj79OVGbXp-Kp63Cg8VScbMyyzKgFrC-gz2MpmaKbcuox_3EC3NmjWz26syRnjVs9OrPkXlwPYFk8xYyDT-VfWMOu0XLB3l0wWp79nSi74hMNnkLK5GcXxvSfQ38B-3yIgA</recordid><startdate>19990226</startdate><enddate>19990226</enddate><creator>Lokhande, C.D.</creator><creator>Ennaoui, A.</creator><creator>Patil, P.S.</creator><creator>Giersig, M.</creator><creator>Diesner, K.</creator><creator>Muller, M.</creator><creator>Tributsch, H.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19990226</creationdate><title>Chemical bath deposition of indium sulphide thin films: preparation and characterization</title><author>Lokhande, C.D. ; Ennaoui, A. ; Patil, P.S. ; Giersig, M. ; Diesner, K. ; Muller, M. ; Tributsch, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c367t-75fa0cc2f2cf9b27ed4ab5c72659f7333f8ed1a23f455a7a159ed81a837b7ad93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Deposition process</topic><topic>Exact sciences and technology</topic><topic>Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Optical properties</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of specific thin films</topic><topic>Other semiconductors</topic><topic>Physics</topic><topic>Structural properties</topic><topic>Sulphides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lokhande, C.D.</creatorcontrib><creatorcontrib>Ennaoui, A.</creatorcontrib><creatorcontrib>Patil, P.S.</creatorcontrib><creatorcontrib>Giersig, M.</creatorcontrib><creatorcontrib>Diesner, K.</creatorcontrib><creatorcontrib>Muller, M.</creatorcontrib><creatorcontrib>Tributsch, H.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lokhande, C.D.</au><au>Ennaoui, A.</au><au>Patil, P.S.</au><au>Giersig, M.</au><au>Diesner, K.</au><au>Muller, M.</au><au>Tributsch, H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Chemical bath deposition of indium sulphide thin films: preparation and characterization</atitle><jtitle>Thin solid films</jtitle><date>1999-02-26</date><risdate>1999</risdate><volume>340</volume><issue>1</issue><spage>18</spage><epage>23</epage><pages>18-23</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>Indium sulphide (In
2S
3) thin films have been successfully deposited on different substrates under varying deposition conditions using chemical bath deposition technique. The deposition mechanism of In
2S
3 thin films from thioacetamide deposition bath has been proposed. Films have been characterized with respect to their crystalline structure, composition, optical and electrical properties by means of X-ray diffraction, TEM, EDAX, optical absorption, TRMC (time resolved microwave conductivity) and RBS. Films on glass substrates were amorphous and on FTO (flourine doped tin oxide coated) glass substrates were polycrystalline (∈ phase). The optical band gap of In
2S
3 thin film was estimated to be 2.75 eV. The as-deposited films were photoactive as evidenced by TRMC studies. The presence of oxygen in the film was detected by RBS analysis.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/S0040-6090(98)00980-8</doi><tpages>6</tpages></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Deposition process Exact sciences and technology Liquid phase epitaxy deposition from liquid phases (melts, solutions, and surface layers on liquids) Materials science Methods of deposition of films and coatings film growth and epitaxy Optical properties Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Other semiconductors Physics Structural properties Sulphides |
| title | Chemical bath deposition of indium sulphide thin films: preparation and characterization |
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