XPS and AFM study of chemical mechanical polishing of silicon nitride

In this paper, the effect of chemical–mechanical polishing (CMP) of silicon nitride films was investigated using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Silicon nitride films with different deposition methods (PECVD and LPCVD) and two different silica-based slurries...

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Veröffentlicht in:	Thin solid films 1998-11, Vol.333 (1), p.219-223
Hauptverfasser:	Yang, G.-R, Zhao, Y.-P, Hu, Y.Z, Paul Chow, T, Gutmann, Ronald J
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical mechanical polishing Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Physics Polishing Silicon nitride Structure and morphology thickness Surface roughness Surface treatments Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology X-ray photoelectron spectroscopy (XPS)
Online-Zugang:	Volltext
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