InAs/InGaSb photodetectors grown on GaAs bonded substrates

The results of wafer fusion between GaAs and InP followed by transfer of an InGaAs film from the InP to GaAs substrate are presented in this paper. This technique of film transfer allowed the subsequent growth of epitaxial materials with approximately 7% lattice mismatch. Type-II InAs/GaInSb superla...

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Veröffentlicht in:	Journal of electronic materials 2001-07, Vol.30 (7), p.798-801
Hauptverfasser:	VILELA, M. F, ANSELM, K. A, SOORIAR, N, JOHNSON, J. L, LIN, C. H, BROWN, G. J, MAHALINGAM, K, SAXLER, A, SZMULOWICZ, F
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bolometer infrared, submillimeter wave, microwave and radiowave receivers and detectors Electronics Exact sciences and technology Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques Instruments, apparatus, components and techniques common to several branches of physics and astronomy Optoelectronic devices Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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