InAs/InGaSb photodetectors grown on GaAs bonded substrates
The results of wafer fusion between GaAs and InP followed by transfer of an InGaAs film from the InP to GaAs substrate are presented in this paper. This technique of film transfer allowed the subsequent growth of epitaxial materials with approximately 7% lattice mismatch. Type-II InAs/GaInSb superla...
Gespeichert in:
| Veröffentlicht in: | Journal of electronic materials 2001-07, Vol.30 (7), p.798-801 |
|---|---|
| Hauptverfasser: | , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 801 |
|---|---|
| container_issue | 7 |
| container_start_page | 798 |
| container_title | Journal of electronic materials |
| container_volume | 30 |
| creator | VILELA, M. F ANSELM, K. A SOORIAR, N JOHNSON, J. L LIN, C. H BROWN, G. J MAHALINGAM, K SAXLER, A SZMULOWICZ, F |
| description | The results of wafer fusion between GaAs and InP followed by transfer of an InGaAs film from the InP to GaAs substrate are presented in this paper. This technique of film transfer allowed the subsequent growth of epitaxial materials with approximately 7% lattice mismatch. Type-II InAs/GaInSb superlattices photodetectors of different designs have been grown by molecular beam epitaxy (MBE) on the alternative InGaAs/GaAs substrate and on standard GaSb substrates. Comparison between photodetectors grown on the two different substrates with nearly identical superlattice periods showed a shift in the cut-off wavelength. The superlattices grown on the alternative substrates were found to have uniform layers, with broader x-ray linewidths than superlattices grown on GaSb substrates. |
| doi_str_mv | 10.1007/s11664-001-0059-2 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_26856215</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>26856215</sourcerecordid><originalsourceid>FETCH-LOGICAL-c330t-6fae76c94be82e682527ec2e6a7f82f860bc77c8d555f947bf3d9fd022b017c3</originalsourceid><addsrcrecordid>eNpdkE1LAzEQhoMoWKs_wNsi4m1tPjYf662UWgsFD_bgLWSzibZsk5rZRfz3prQH8TDMHJ73ZXgQuiX4kWAsJ0CIEFWJMcnD65KeoRHhFSuJEu_naISZICWnjF-iK4Bt5jhRZISelmEKk2VYmLem2H_GPraud7aPCYqPFL9DEUOxMFMomhha1xYwNNAn0zu4RhfedOBuTnuM1s_z9eylXL0ulrPpqrSM4b4U3jgpbF01TlEnFOVUOpsvI72iXgncWCmtajnnvq5k41lb-xZT2mAiLRujh2PtPsWvwUGvdxuwrutMcHEATYXighKewbt_4DYOKeTXNMWVUjiLyRA5QjZFgOS83qfNzqQfTbA-mNRHkzob0geTmubM_anYgDWdTybYDfwJVrLCkv0C1cZxxw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>204880005</pqid></control><display><type>article</type><title>InAs/InGaSb photodetectors grown on GaAs bonded substrates</title><source>SpringerNature Journals</source><creator>VILELA, M. F ; ANSELM, K. A ; SOORIAR, N ; JOHNSON, J. L ; LIN, C. H ; BROWN, G. J ; MAHALINGAM, K ; SAXLER, A ; SZMULOWICZ, F</creator><creatorcontrib>VILELA, M. F ; ANSELM, K. A ; SOORIAR, N ; JOHNSON, J. L ; LIN, C. H ; BROWN, G. J ; MAHALINGAM, K ; SAXLER, A ; SZMULOWICZ, F</creatorcontrib><description>The results of wafer fusion between GaAs and InP followed by transfer of an InGaAs film from the InP to GaAs substrate are presented in this paper. This technique of film transfer allowed the subsequent growth of epitaxial materials with approximately 7% lattice mismatch. Type-II InAs/GaInSb superlattices photodetectors of different designs have been grown by molecular beam epitaxy (MBE) on the alternative InGaAs/GaAs substrate and on standard GaSb substrates. Comparison between photodetectors grown on the two different substrates with nearly identical superlattice periods showed a shift in the cut-off wavelength. The superlattices grown on the alternative substrates were found to have uniform layers, with broader x-ray linewidths than superlattices grown on GaSb substrates.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-001-0059-2</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>New York, NY: Institute of Electrical and Electronics Engineers</publisher><subject>Applied sciences ; Bolometer; infrared, submillimeter wave, microwave and radiowave receivers and detectors ; Electronics ; Exact sciences and technology ; Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques ; Instruments, apparatus, components and techniques common to several branches of physics and astronomy ; Optoelectronic devices ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Journal of electronic materials, 2001-07, Vol.30 (7), p.798-801</ispartof><rights>2001 INIST-CNRS</rights><rights>Copyright Minerals, Metals & Materials Society Jul 2001</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c330t-6fae76c94be82e682527ec2e6a7f82f860bc77c8d555f947bf3d9fd022b017c3</citedby><cites>FETCH-LOGICAL-c330t-6fae76c94be82e682527ec2e6a7f82f860bc77c8d555f947bf3d9fd022b017c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,780,784,789,790,23930,23931,25140,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=1047407$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>VILELA, M. F</creatorcontrib><creatorcontrib>ANSELM, K. A</creatorcontrib><creatorcontrib>SOORIAR, N</creatorcontrib><creatorcontrib>JOHNSON, J. L</creatorcontrib><creatorcontrib>LIN, C. H</creatorcontrib><creatorcontrib>BROWN, G. J</creatorcontrib><creatorcontrib>MAHALINGAM, K</creatorcontrib><creatorcontrib>SAXLER, A</creatorcontrib><creatorcontrib>SZMULOWICZ, F</creatorcontrib><title>InAs/InGaSb photodetectors grown on GaAs bonded substrates</title><title>Journal of electronic materials</title><description>The results of wafer fusion between GaAs and InP followed by transfer of an InGaAs film from the InP to GaAs substrate are presented in this paper. This technique of film transfer allowed the subsequent growth of epitaxial materials with approximately 7% lattice mismatch. Type-II InAs/GaInSb superlattices photodetectors of different designs have been grown by molecular beam epitaxy (MBE) on the alternative InGaAs/GaAs substrate and on standard GaSb substrates. Comparison between photodetectors grown on the two different substrates with nearly identical superlattice periods showed a shift in the cut-off wavelength. The superlattices grown on the alternative substrates were found to have uniform layers, with broader x-ray linewidths than superlattices grown on GaSb substrates.</description><subject>Applied sciences</subject><subject>Bolometer; infrared, submillimeter wave, microwave and radiowave receivers and detectors</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques</subject><subject>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</subject><subject>Optoelectronic devices</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNpdkE1LAzEQhoMoWKs_wNsi4m1tPjYf662UWgsFD_bgLWSzibZsk5rZRfz3prQH8TDMHJ73ZXgQuiX4kWAsJ0CIEFWJMcnD65KeoRHhFSuJEu_naISZICWnjF-iK4Bt5jhRZISelmEKk2VYmLem2H_GPraud7aPCYqPFL9DEUOxMFMomhha1xYwNNAn0zu4RhfedOBuTnuM1s_z9eylXL0ulrPpqrSM4b4U3jgpbF01TlEnFOVUOpsvI72iXgncWCmtajnnvq5k41lb-xZT2mAiLRujh2PtPsWvwUGvdxuwrutMcHEATYXighKewbt_4DYOKeTXNMWVUjiLyRA5QjZFgOS83qfNzqQfTbA-mNRHkzob0geTmubM_anYgDWdTybYDfwJVrLCkv0C1cZxxw</recordid><startdate>20010701</startdate><enddate>20010701</enddate><creator>VILELA, M. F</creator><creator>ANSELM, K. A</creator><creator>SOORIAR, N</creator><creator>JOHNSON, J. L</creator><creator>LIN, C. H</creator><creator>BROWN, G. J</creator><creator>MAHALINGAM, K</creator><creator>SAXLER, A</creator><creator>SZMULOWICZ, F</creator><general>Institute of Electrical and Electronics Engineers</general><general>Springer Nature B.V</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20010701</creationdate><title>InAs/InGaSb photodetectors grown on GaAs bonded substrates</title><author>VILELA, M. F ; ANSELM, K. A ; SOORIAR, N ; JOHNSON, J. L ; LIN, C. H ; BROWN, G. J ; MAHALINGAM, K ; SAXLER, A ; SZMULOWICZ, F</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c330t-6fae76c94be82e682527ec2e6a7f82f860bc77c8d555f947bf3d9fd022b017c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Applied sciences</topic><topic>Bolometer; infrared, submillimeter wave, microwave and radiowave receivers and detectors</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques</topic><topic>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</topic><topic>Optoelectronic devices</topic><topic>Physics</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>VILELA, M. F</creatorcontrib><creatorcontrib>ANSELM, K. A</creatorcontrib><creatorcontrib>SOORIAR, N</creatorcontrib><creatorcontrib>JOHNSON, J. L</creatorcontrib><creatorcontrib>LIN, C. H</creatorcontrib><creatorcontrib>BROWN, G. J</creatorcontrib><creatorcontrib>MAHALINGAM, K</creatorcontrib><creatorcontrib>SAXLER, A</creatorcontrib><creatorcontrib>SZMULOWICZ, F</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>VILELA, M. F</au><au>ANSELM, K. A</au><au>SOORIAR, N</au><au>JOHNSON, J. L</au><au>LIN, C. H</au><au>BROWN, G. J</au><au>MAHALINGAM, K</au><au>SAXLER, A</au><au>SZMULOWICZ, F</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>InAs/InGaSb photodetectors grown on GaAs bonded substrates</atitle><jtitle>Journal of electronic materials</jtitle><date>2001-07-01</date><risdate>2001</risdate><volume>30</volume><issue>7</issue><spage>798</spage><epage>801</epage><pages>798-801</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><coden>JECMA5</coden><abstract>The results of wafer fusion between GaAs and InP followed by transfer of an InGaAs film from the InP to GaAs substrate are presented in this paper. This technique of film transfer allowed the subsequent growth of epitaxial materials with approximately 7% lattice mismatch. Type-II InAs/GaInSb superlattices photodetectors of different designs have been grown by molecular beam epitaxy (MBE) on the alternative InGaAs/GaAs substrate and on standard GaSb substrates. Comparison between photodetectors grown on the two different substrates with nearly identical superlattice periods showed a shift in the cut-off wavelength. The superlattices grown on the alternative substrates were found to have uniform layers, with broader x-ray linewidths than superlattices grown on GaSb substrates.</abstract><cop>New York, NY</cop><pub>Institute of Electrical and Electronics Engineers</pub><doi>10.1007/s11664-001-0059-2</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0361-5235 |
| ispartof | Journal of electronic materials, 2001-07, Vol.30 (7), p.798-801 |
| issn | 0361-5235 1543-186X |
| language | eng |
| recordid | cdi_proquest_miscellaneous_26856215 |
| source | SpringerNature Journals |
| subjects | Applied sciences Bolometer infrared, submillimeter wave, microwave and radiowave receivers and detectors Electronics Exact sciences and technology Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques Instruments, apparatus, components and techniques common to several branches of physics and astronomy Optoelectronic devices Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | InAs/InGaSb photodetectors grown on GaAs bonded substrates |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T07%3A38%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=InAs/InGaSb%20photodetectors%20grown%20on%20GaAs%20bonded%20substrates&rft.jtitle=Journal%20of%20electronic%20materials&rft.au=VILELA,%20M.%20F&rft.date=2001-07-01&rft.volume=30&rft.issue=7&rft.spage=798&rft.epage=801&rft.pages=798-801&rft.issn=0361-5235&rft.eissn=1543-186X&rft.coden=JECMA5&rft_id=info:doi/10.1007/s11664-001-0059-2&rft_dat=%3Cproquest_cross%3E26856215%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=204880005&rft_id=info:pmid/&rfr_iscdi=true |