Enhanced performance of silicon based photodetectors using silicon/germanium nanostructures

We have studied the influence of nanoscaled lateral silicon/silicon–germanium layers and three-dimensional germanium quantum dots on the performance of silicon based infrared detectors in the wavelength range between 2 and 10 μm and solar cells for space applications. The SiGe heterostructures were...

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Veröffentlicht in:	Solid-state electronics 2001-11, Vol.45 (11), p.1921-1925
Hauptverfasser:	Konle, J., Presting, H., Kibbel, H., Thonke, K., Sauer, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	IR-detectors Quantum dots SiGe Solar cells Stranski Krastanow growth
Online-Zugang:	Volltext
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