The etching behavior of tungsten (W) with respect to the orientation of the grain boundary and masking layers
In this paper, we present the study of the tungsten (W) etch rate as a function of different masking materials: Ti/TiN and SiO 2. In addition, the impact of the W grain boundary orientation on the etch rate is established. With the use of a SiO 2 masking layer, the W etch rate is five times higher c...
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| Veröffentlicht in: | Thin solid films 1998-05, Vol.320 (1), p.147-150 |
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| container_title | Thin solid films |
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| creator | Lee, H.C Vanhaelemeersch, S |
| description | In this paper, we present the study of the tungsten (W) etch rate as a function of different masking materials: Ti/TiN and SiO
2. In addition, the impact of the W grain boundary orientation on the etch rate is established. With the use of a SiO
2 masking layer, the W etch rate is five times higher compared to etching with a Ti/TiN masking film. The blanket W etch rate is the average of these two values. The difference of etch rate with respect to the orientations of grain boundaries is only detected in pure SF
6 plasma. |
| doi_str_mv | 10.1016/S0040-6090(97)01079-1 |
| format | Article |
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2. In addition, the impact of the W grain boundary orientation on the etch rate is established. With the use of a SiO
2 masking layer, the W etch rate is five times higher compared to etching with a Ti/TiN masking film. The blanket W etch rate is the average of these two values. The difference of etch rate with respect to the orientations of grain boundaries is only detected in pure SF
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2. In addition, the impact of the W grain boundary orientation on the etch rate is established. With the use of a SiO
2 masking layer, the W etch rate is five times higher compared to etching with a Ti/TiN masking film. The blanket W etch rate is the average of these two values. The difference of etch rate with respect to the orientations of grain boundaries is only detected in pure SF
6 plasma.</description><subject>Applied sciences</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Masking materials: Ti/TiN and SiO 2</subject><subject>Materials science</subject><subject>Metals. Metallurgy</subject><subject>Physics</subject><subject>Solid-fluid interfaces</subject><subject>Surface cleaning, etching, patterning</subject><subject>Surface treatments</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>W grain boundary orientation</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNqFkE1rGzEQhkVpoW7an1DQIZTksKk-VtrdUymm-YBAD03pUcxqR7aateRKckL-fWU75JrTiOF5Z0YPIZ85u-CM66-_GGtZo9nAzobunHHWDQ1_Qxa8rw_RSf6WLF6Q9-RDzn8ZY1wIuSCbuzVSLHbtw4qOuIYHHxONjpZdWOWCgZ79OaePvqxpwrxFW2iJtNRQTB5DgeJjOPC1tUrgAx3jLkyQniiEiW4g3-9Hz_CEKX8k7xzMGT891xPy-_LH3fK6uf15dbP8fttYyVVpWhjbUTrRMy2Zk3qwox1Ez6VUauLTOKF2becU9KC4Gi2z2jKhxDA4EBMIeUK-HOduU_y3w1zMxmeL8wwB4y4boXvR6q6toDqCNsWcEzqzTX5Tjzecmb1cc5Br9ubM0JmDXMNr7vR5AWQLs0sQrM8vYSG16rs99u2IYf3sg8dksq3WLE4-VZVmiv6VRf8BUC6Opg</recordid><startdate>19980504</startdate><enddate>19980504</enddate><creator>Lee, H.C</creator><creator>Vanhaelemeersch, S</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19980504</creationdate><title>The etching behavior of tungsten (W) with respect to the orientation of the grain boundary and masking layers</title><author>Lee, H.C ; Vanhaelemeersch, S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c315t-4ab4b3f280630f369cbc92813355d1dbde6f47f5a8a515bc0c6c025299fa2da23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Applied sciences</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Masking materials: Ti/TiN and SiO 2</topic><topic>Materials science</topic><topic>Metals. Metallurgy</topic><topic>Physics</topic><topic>Solid-fluid interfaces</topic><topic>Surface cleaning, etching, patterning</topic><topic>Surface treatments</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>W grain boundary orientation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, H.C</creatorcontrib><creatorcontrib>Vanhaelemeersch, S</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, H.C</au><au>Vanhaelemeersch, S</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The etching behavior of tungsten (W) with respect to the orientation of the grain boundary and masking layers</atitle><jtitle>Thin solid films</jtitle><date>1998-05-04</date><risdate>1998</risdate><volume>320</volume><issue>1</issue><spage>147</spage><epage>150</epage><pages>147-150</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>In this paper, we present the study of the tungsten (W) etch rate as a function of different masking materials: Ti/TiN and SiO
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| fulltext | fulltext |
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| ispartof | Thin solid films, 1998-05, Vol.320 (1), p.147-150 |
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| language | eng |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Applied sciences Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Masking materials: Ti/TiN and SiO 2 Materials science Metals. Metallurgy Physics Solid-fluid interfaces Surface cleaning, etching, patterning Surface treatments Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) W grain boundary orientation |
| title | The etching behavior of tungsten (W) with respect to the orientation of the grain boundary and masking layers |
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