The impact of the nitridation process on the properties of the Si-SiO2 interface

A technique for the simultaneous measurement of the oxide-Si interface properties and of minority carrier lifetime in the Si volume was used for a systematic study of the nitridation process of oxide films. This technique is based on the surface recombination velocity measurements and does not requi...

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Veröffentlicht in:	Journal of non-crystalline solids 2001-02, Vol.280 (1-3), p.39-47
Hauptverfasser:	POLIGNANO, M. L, ALESSANDRI, M, CRIVELLI, B, ZONCA, R, CARICATO, A. P, BERSANI, M, SBETTI, M, VANZETTI, L
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge carriers: generation, recombination, lifetime, trapping, mean free paths Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Physics Surface and interface electron states
Online-Zugang:	Volltext
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