Structural studies of ITO thin films with the Rietveld method
Tin doped indium oxide (ITO) films of different tin concentrations were deposited by e-beam evaporation onto glass substrates. These ITO films were investigated using grazing incidence X-ray diffractometry (GIXRD). The application of the Rietveld refinement to GIXRD patterns provides information abo...
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| Veröffentlicht in: | Thin solid films 1998-11, Vol.332 (1-2), p.277-281 |
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| creator | QUAAS, M EGGS, C WULFF, H |
| description | Tin doped indium oxide (ITO) films of different tin concentrations were deposited by e-beam evaporation onto glass substrates. These ITO films were investigated using grazing incidence X-ray diffractometry (GIXRD). The application of the Rietveld refinement to GIXRD patterns provides information about the crystallographic structure of the films. Lattice constants, atomic positions and bond lengths were calculated for different doping concentrations. From the shifting and broadening of X-ray line profiles domain sizes and microstrains were calculated. Small tin amounts cause decreasing lattice constants and also a decrease in In/Sn1-In/Sn2 bond lengths. The In/Sn1-O bond length increases and the distortion of the asymmetric In/Sn2-O octahedron becomes stronger. At larger doping concentrations both lattice constants and In/Sn1-In/Sn2 lengths increase. The In/Sn1-O bond length and the distortion of the In/Sn2 octahedron first decrease, but with further tin insertion an increase of these parameters is observed. The microstrains calculated from X-ray line profile analysis correlate with the distortion behaviour of the In/Sn2-O octahedrons. With increasing domain sizes the resistivity of the films decreases. Therefore it can be concluded that the conductivity of tin doped In sub(2)O sub(3) films is not dominated by grain boundaries. Some mechanisms of the tin insertion into the In sub(2)O sub(3) lattice are discussed. |
| doi_str_mv | 10.1016/S0040-6090(98)01064-5 |
| format | Article |
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These ITO films were investigated using grazing incidence X-ray diffractometry (GIXRD). The application of the Rietveld refinement to GIXRD patterns provides information about the crystallographic structure of the films. Lattice constants, atomic positions and bond lengths were calculated for different doping concentrations. From the shifting and broadening of X-ray line profiles domain sizes and microstrains were calculated. Small tin amounts cause decreasing lattice constants and also a decrease in In/Sn1-In/Sn2 bond lengths. The In/Sn1-O bond length increases and the distortion of the asymmetric In/Sn2-O octahedron becomes stronger. At larger doping concentrations both lattice constants and In/Sn1-In/Sn2 lengths increase. The In/Sn1-O bond length and the distortion of the In/Sn2 octahedron first decrease, but with further tin insertion an increase of these parameters is observed. The microstrains calculated from X-ray line profile analysis correlate with the distortion behaviour of the In/Sn2-O octahedrons. With increasing domain sizes the resistivity of the films decreases. Therefore it can be concluded that the conductivity of tin doped In sub(2)O sub(3) films is not dominated by grain boundaries. Some mechanisms of the tin insertion into the In sub(2)O sub(3) lattice are discussed.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/S0040-6090(98)01064-5</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier Science</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Physics ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Thin solid films, 1998-11, Vol.332 (1-2), p.277-281</ispartof><rights>1999 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c311t-e447bb0017fbb0e5e59da3813831fff816019851995226cb2d5076a6f266d46e3</citedby><cites>FETCH-LOGICAL-c311t-e447bb0017fbb0e5e59da3813831fff816019851995226cb2d5076a6f266d46e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,778,782,787,788,23917,23918,25127,27911,27912</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=1627899$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>QUAAS, M</creatorcontrib><creatorcontrib>EGGS, C</creatorcontrib><creatorcontrib>WULFF, H</creatorcontrib><title>Structural studies of ITO thin films with the Rietveld method</title><title>Thin solid films</title><description>Tin doped indium oxide (ITO) films of different tin concentrations were deposited by e-beam evaporation onto glass substrates. These ITO films were investigated using grazing incidence X-ray diffractometry (GIXRD). The application of the Rietveld refinement to GIXRD patterns provides information about the crystallographic structure of the films. Lattice constants, atomic positions and bond lengths were calculated for different doping concentrations. From the shifting and broadening of X-ray line profiles domain sizes and microstrains were calculated. Small tin amounts cause decreasing lattice constants and also a decrease in In/Sn1-In/Sn2 bond lengths. The In/Sn1-O bond length increases and the distortion of the asymmetric In/Sn2-O octahedron becomes stronger. At larger doping concentrations both lattice constants and In/Sn1-In/Sn2 lengths increase. The In/Sn1-O bond length and the distortion of the In/Sn2 octahedron first decrease, but with further tin insertion an increase of these parameters is observed. The microstrains calculated from X-ray line profile analysis correlate with the distortion behaviour of the In/Sn2-O octahedrons. With increasing domain sizes the resistivity of the films decreases. Therefore it can be concluded that the conductivity of tin doped In sub(2)O sub(3) films is not dominated by grain boundaries. Some mechanisms of the tin insertion into the In sub(2)O sub(3) lattice are discussed.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Structure and morphology; thickness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNpFkEtLAzEUhYMoWKs_QchCRBejN8kkkyxcSPFRKBRsXYfMTEIjM52aZBT_vdMHujpc-M498CF0SeCOABH3C4AcMgEKbpS8BQIiz_gRGhFZqIwWjByj0R9yis5i_AAAQikboYdFCn2V-mAaHFNfextx5_B0Ocdp5dfY-aaN-Nun1XBb_OZt-rJNjVubVl19jk6caaK9OOQYvT8_LSev2Wz-Mp08zrKKEZIym-dFWQ6ThRvCcstVbZgkTDLinJNEAFGSE6U4paIqac2hEEY4KkSdC8vG6Hr_dxO6z97GpFsfK9s0Zm27PmoqCqVkTgeQ78EqdDEG6_Qm-NaEH01Ab2XpnSy9NaGV1DtZmg-9q8OAiZVpXDDrysf_sqCFVIr9AqMNaCI</recordid><startdate>19981102</startdate><enddate>19981102</enddate><creator>QUAAS, M</creator><creator>EGGS, C</creator><creator>WULFF, H</creator><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19981102</creationdate><title>Structural studies of ITO thin films with the Rietveld method</title><author>QUAAS, M ; EGGS, C ; WULFF, H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c311t-e447bb0017fbb0e5e59da3813831fff816019851995226cb2d5076a6f266d46e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Structure and morphology; thickness</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>QUAAS, M</creatorcontrib><creatorcontrib>EGGS, C</creatorcontrib><creatorcontrib>WULFF, H</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>QUAAS, M</au><au>EGGS, C</au><au>WULFF, H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Structural studies of ITO thin films with the Rietveld method</atitle><jtitle>Thin solid films</jtitle><date>1998-11-02</date><risdate>1998</risdate><volume>332</volume><issue>1-2</issue><spage>277</spage><epage>281</epage><pages>277-281</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>Tin doped indium oxide (ITO) films of different tin concentrations were deposited by e-beam evaporation onto glass substrates. These ITO films were investigated using grazing incidence X-ray diffractometry (GIXRD). The application of the Rietveld refinement to GIXRD patterns provides information about the crystallographic structure of the films. Lattice constants, atomic positions and bond lengths were calculated for different doping concentrations. From the shifting and broadening of X-ray line profiles domain sizes and microstrains were calculated. Small tin amounts cause decreasing lattice constants and also a decrease in In/Sn1-In/Sn2 bond lengths. The In/Sn1-O bond length increases and the distortion of the asymmetric In/Sn2-O octahedron becomes stronger. At larger doping concentrations both lattice constants and In/Sn1-In/Sn2 lengths increase. The In/Sn1-O bond length and the distortion of the In/Sn2 octahedron first decrease, but with further tin insertion an increase of these parameters is observed. The microstrains calculated from X-ray line profile analysis correlate with the distortion behaviour of the In/Sn2-O octahedrons. With increasing domain sizes the resistivity of the films decreases. Therefore it can be concluded that the conductivity of tin doped In sub(2)O sub(3) films is not dominated by grain boundaries. Some mechanisms of the tin insertion into the In sub(2)O sub(3) lattice are discussed.</abstract><cop>Lausanne</cop><pub>Elsevier Science</pub><doi>10.1016/S0040-6090(98)01064-5</doi><tpages>5</tpages></addata></record> |
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| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Structural studies of ITO thin films with the Rietveld method |
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