Mechanical and tribological properties of cBN films on silicon and tungsten carbide substrates

Cubic boron nitride (cBN) films with a thickness of more than 2 μm on silicon and up to 0.8 μm on tungsten carbide substrates were prepared by reactive rf sputtering, in an Ar/N 2 discharge, using an electrically conducting boron carbide (B 4C) target. The increase in cBN film thickness was reached...

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Veröffentlicht in:	Thin solid films 2001-11, Vol.398, p.142-149
Hauptverfasser:	Keunecke, M, Yamamoto, K, Bewilogua, K
Format:	Artikel
Sprache:	eng
Schlagworte:	cBN Cubic boron nitride Hardness Sputter deposition Superhard
Online-Zugang:	Volltext
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