Molecular Beam Epitaxy of Wurtzite GaN-Based Magnetic Alloy Semiconductors

The preparation of hexagonal GaN:Mn and GaN:Fe epilayers has been studied by RF-plasma-assisted molecular beam epitaxy. GaN:Fe epilayers exhibit superparamagnetic behavior, presumably due to ferromagnetic inclusions. GaN:Mn epilayers can be expressed in the form of Ga 1- x Mn x N with x up to 0.02,...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2001-01, Vol.40 (7B), p.L724-L727
Hauptverfasser:	Seiji Kuwabara, Seiji Kuwabara, Tsuyoshi Kondo, Tsuyoshi Kondo, Toyohiro Chikyow, Toyohiro Chikyow, Parhat Ahmet, Parhat Ahmet, Hiroo Munekata, Hiroo Munekata
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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