High-voltage, double-gate devices on silicon-on-insulator
This paper reviews several silicon-on-insulator power technologies, and compares them to those of bulk silicon and wide band-gap material. The concept of double-gate for thin-film SOI power devices is brought into historical context. Several criteria for the proper choice of technology are discussed...
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| Veröffentlicht in: | Microelectronic engineering 2001-11, Vol.59 (1), p.461-468 |
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| container_end_page | 468 |
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| container_title | Microelectronic engineering |
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| creator | Zingg, René P |
| description | This paper reviews several silicon-on-insulator power technologies, and compares them to those of bulk silicon and wide band-gap material. The concept of double-gate for thin-film SOI power devices is brought into historical context. Several criteria for the proper choice of technology are discussed, and typical applications presented. Some aspects on the implementation of novel technology are reviewed, and an outlook on discrete power semiconductors and power integrated circuits given. |
| doi_str_mv | 10.1016/S0167-9317(01)00644-X |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0167-9317 |
| ispartof | Microelectronic engineering, 2001-11, Vol.59 (1), p.461-468 |
| issn | 0167-9317 1873-5568 |
| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences DMOS Electronics Exact sciences and technology High voltage Other multijunction devices. Power transistors. Thyristors RESURF Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon limit SOI Specific on-resistance Super-junctions |
| title | High-voltage, double-gate devices on silicon-on-insulator |
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