Ku-band (12.6GHz) SiGe/Si high-power heterojunction bipolar transistors
Large-area multifinger Si sub(0.7)Ge sub(0.3)/Si heterojunction bipolar transistors for high-power and high-frequency operation have been designed, fabricated and characterised. For a nine-emitter finger device, an f sub(max) of 100 GHz was achieved with a maximum available gain of 14 dB. The peak p...
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| Veröffentlicht in: | Electronics letters 2001-08, Vol.37 (18), p.1140-1142 |
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| container_title | Electronics letters |
| container_volume | 37 |
| creator | Ma, Z Mohammadi, S Bhattacharya, P Katehi, L P B Alterovitz, S A Ponchak, G E Strohm, K M Luy, J-F |
| description | Large-area multifinger Si sub(0.7)Ge sub(0.3)/Si heterojunction bipolar transistors for high-power and high-frequency operation have been designed, fabricated and characterised. For a nine-emitter finger device, an f sub(max) of 100 GHz was achieved with a maximum available gain of 14 dB. The peak power-added efficiency in the Ku-band (12.6GHz) in the common-base configuration for a 15-emitter finger device was 23% with associated power gain of 7.4 dB and an output power of 22 dBm under class AB operation. The device delivered a maximum output power of 24.4 dBm under the same matching conditions. |
| doi_str_mv | 10.1049/el:20010770 |
| format | Article |
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For a nine-emitter finger device, an f sub(max) of 100 GHz was achieved with a maximum available gain of 14 dB. The peak power-added efficiency in the Ku-band (12.6GHz) in the common-base configuration for a 15-emitter finger device was 23% with associated power gain of 7.4 dB and an output power of 22 dBm under class AB operation. 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| fulltext | fulltext |
| identifier | ISSN: 0013-5194 |
| ispartof | Electronics letters, 2001-08, Vol.37 (18), p.1140-1142 |
| issn | 0013-5194 |
| language | eng |
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| source | Alma/SFX Local Collection |
| title | Ku-band (12.6GHz) SiGe/Si high-power heterojunction bipolar transistors |
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