Hydrogenated amorphous silicon deposited by DC magnetron sputtering at high temperature

In this work we report some results obtained on hydrogenated amorphous silicon (a-Si:H) deposited by DC magnetron sputtering at high rate between 15 and 20 Å/s and at high temperature between 773 and 873 K. The activation energy of the conductivity decreases from 0.9 to 0.55 eV for the films deposit...

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Veröffentlicht in:	Thin solid films 2001-02, Vol.383 (1-2), p.192-195
Hauptverfasser:	Cherfi, R., Farhi, G., Aoucher, M., Zellama, K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Cross-disciplinary physics: materials science rheology Deposition by sputtering Exact sciences and technology Hydrogenated amorphous silicon Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Sputtering deposition Thin films
Online-Zugang:	Volltext
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