HYDROGEN-ROBUST SUBMICRON IrOx/Pb(Zr, Ti)O3/Ir CAPACITORS FOR EMBEDDED FERROELECTRIC MEMORY

Authors have demonstrated that the scaling of IrOx(Pb(Zr, Ti)O3:PZT)/Ir capacitors can be extended into the submicrometer regime. The submicrometer IrOx/PZT/Ir capacitors were fabricated using a one-mask stack-etch process, integrated with an SiO2 interlayer dielectric, and contacted with Al metalli...

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Veröffentlicht in:Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 4B, pp. 2911-2916. 2001 Part 1. Vol. 40, no. 4B, pp. 2911-2916. 2001, 2001, Vol.40 (4B), p.2911-2916
Hauptverfasser: Sakoda, T, Moise, T S, Summerfelt, S R, Colombo, L, Xing, G, Gilbert, S R
Format: Artikel
Sprache:eng
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