HgCdTe/CdTe/Si infrared photodetectors grown by MBE for near-room temperature operation

Conventional HgCdTe infrared detectors need significant cooling in order to reduce noise and leakage currents resulting from thermal generation and recombination processes. Although the need for cooling has long been thought to be fundamental and inevitable, it has been recently suggested that Auger...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of electronic materials 2001-06, Vol.30 (6), p.711-716
Hauptverfasser: VELICU, S, BADANO, G, SELAMET, Y, GREIN, C. H, FAURIE, J. P, SIVANANTHAN, S, BOIERIU, P, RAFOL, D. O. N, ASHOKAN, R
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!