HgCdTe/CdTe/Si infrared photodetectors grown by MBE for near-room temperature operation
Conventional HgCdTe infrared detectors need significant cooling in order to reduce noise and leakage currents resulting from thermal generation and recombination processes. Although the need for cooling has long been thought to be fundamental and inevitable, it has been recently suggested that Auger...
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Veröffentlicht in: | Journal of electronic materials 2001-06, Vol.30 (6), p.711-716 |
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Format: | Artikel |
Sprache: | eng |
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