Growth of long wavelength infrared MCT emitters on conductive substrates
Uncooled operation of Auger suppressed fully doped mercury cadmium telluride (MCT) devices designed by Ashley and Elliott1 and grown by metalorganic vapor phase epitaxy (MOVPE) by Maxey et al.2 has been demonstrated. These devices also demonstrate efficient negative luminescent emission in the long...
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| Veröffentlicht in: | Journal of electronic materials 2001-06, Vol.30 (6), p.723-728 |
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| creator | MAXEY, C. D AHMED, M. U JONES, C. L CATCHPOLE, R. A CAPPER, P GORDON, N. T HOULTON, M ASHLEY, T |
| description | Uncooled operation of Auger suppressed fully doped mercury cadmium telluride (MCT) devices designed by Ashley and Elliott1 and grown by metalorganic vapor phase epitaxy (MOVPE) by Maxey et al.2 has been demonstrated. These devices also demonstrate efficient negative luminescent emission in the long wavelength infrared (LWIR) spectra.3 However, to operate a large area device (>1 cm2) requires a large current (∼10 A), and consequently, it is critical that the series resistance is minimized. To increase optical efficiency, deep optical concentrators are needed. Similar InSb molecular beam epitaxy (MBE) devices utilize a highly doped InSb substrate which allows a conduction path into the substrate with reduced series resistance and acts as an optical window (due to Moss-Burstein shift) allowing transmission of the 6 m IR emission. A suitable high conductivity substrate for MCT emitter devices is required to have a sheet resistivity of |
| doi_str_mv | 10.1007/BF02665862 |
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| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_26756235</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2664698534</sourcerecordid><originalsourceid>FETCH-LOGICAL-c344t-8e5a460325c768e307ce53148574a17d67a1ed40c9fdd7c61f44f3ed0b978b603</originalsourceid><addsrcrecordid>eNp1kE1LAzEQhoMoWKsXf0FQ8SCsJpvPHrXYVqh4qeBtSbOzdct2U5Nsi__elAqK4GlgeN6XmQehc0puKSHq7mFEcimFlvkB6lHBWUa1fDtEPcIkzUTOxDE6CWFJCBVU0x6ajL3bxnfsKty4doG3ZgMNtIu0qtvKGw8lfh7OMKzqGMEH7FpsXVt2NtYbwKGbh-hNhHCKjirTBDj7nn30OnqcDSfZ9GX8NLyfZpZxHjMNwnBJWC6skhoYURYEo1wLxQ1VpVSGQsmJHVRlqaykFecVg5LMB0rPU7CPrve9a-8-OgixWNXBQtOYFlwXilwqIdOfCbz8Ay5d59t0W2IklwMtGE_Uxb8U4YOdTZ2gmz1kvQvBQ1Wsfb0y_rOgpNh5L368J_jqu9EEa5rksLV1-JXgguacfQGoVX-O</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>204902668</pqid></control><display><type>article</type><title>Growth of long wavelength infrared MCT emitters on conductive substrates</title><source>SpringerLink Journals</source><creator>MAXEY, C. D ; AHMED, M. U ; JONES, C. L ; CATCHPOLE, R. A ; CAPPER, P ; GORDON, N. T ; HOULTON, M ; ASHLEY, T</creator><creatorcontrib>MAXEY, C. D ; AHMED, M. U ; JONES, C. L ; CATCHPOLE, R. A ; CAPPER, P ; GORDON, N. T ; HOULTON, M ; ASHLEY, T</creatorcontrib><description>Uncooled operation of Auger suppressed fully doped mercury cadmium telluride (MCT) devices designed by Ashley and Elliott1 and grown by metalorganic vapor phase epitaxy (MOVPE) by Maxey et al.2 has been demonstrated. These devices also demonstrate efficient negative luminescent emission in the long wavelength infrared (LWIR) spectra.3 However, to operate a large area device (>1 cm2) requires a large current (∼10 A), and consequently, it is critical that the series resistance is minimized. To increase optical efficiency, deep optical concentrators are needed. Similar InSb molecular beam epitaxy (MBE) devices utilize a highly doped InSb substrate which allows a conduction path into the substrate with reduced series resistance and acts as an optical window (due to Moss-Burstein shift) allowing transmission of the 6 m IR emission. A suitable high conductivity substrate for MCT emitter devices is required to have a sheet resistivity of <1 /□. The conventional MCT epitaxy substrates are CdZnTe and GaAs. High conductivity cadmium zinc telluride (CZT) was not found to be commercially available. Although high conductivity, n-type GaAs is available, the maximum doping is limited by the degree of free carrier absorption in the LWIR which would reduce the potential emitter efficiency. This paper describes a novel investigation into achieving working LW emitter devices with deep mesas in which the current is carried by the GaAs substrate. The key issue which had to be addressed was obtaining conduction between the II/VI and III/V materials. A variety of interface designs was investigated but the best results were achieved by minimizing the band-gap of the interfacial II/VI MCT and optimizing the properties of the top region of the GaAs substrate.</description><identifier>ISSN: 0361-5235</identifier><identifier>ISSN: 0381-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/BF02665862</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>New York, NY: Institute of Electrical and Electronics Engineers</publisher><subject>Applied sciences ; Augers ; Cadmium zinc tellurides ; Devices ; Electronics ; Emission ; Emitters ; Epitaxial growth ; Exact sciences and technology ; Gallium arsenide ; Indium antimonide ; Infrared spectra ; Intermetallic compounds ; Mercury cadmium telluride ; Mercury cadmium tellurides ; Mesas ; Metalorganic chemical vapor deposition ; Molecular beam epitaxy ; Optoelectronic devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Substrates ; Vapor phase epitaxy ; Vapor phases ; Zinc telluride ; Zinc tellurides</subject><ispartof>Journal of electronic materials, 2001-06, Vol.30 (6), p.723-728</ispartof><rights>2001 INIST-CNRS</rights><rights>Copyright Minerals, Metals & Materials Society Jun 2001</rights><rights>TMS-The Minerals, Metals and Materials Society 2001.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c344t-8e5a460325c768e307ce53148574a17d67a1ed40c9fdd7c61f44f3ed0b978b603</citedby><cites>FETCH-LOGICAL-c344t-8e5a460325c768e307ce53148574a17d67a1ed40c9fdd7c61f44f3ed0b978b603</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,776,780,785,786,23909,23910,25118,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=1045124$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>MAXEY, C. D</creatorcontrib><creatorcontrib>AHMED, M. U</creatorcontrib><creatorcontrib>JONES, C. L</creatorcontrib><creatorcontrib>CATCHPOLE, R. A</creatorcontrib><creatorcontrib>CAPPER, P</creatorcontrib><creatorcontrib>GORDON, N. T</creatorcontrib><creatorcontrib>HOULTON, M</creatorcontrib><creatorcontrib>ASHLEY, T</creatorcontrib><title>Growth of long wavelength infrared MCT emitters on conductive substrates</title><title>Journal of electronic materials</title><description>Uncooled operation of Auger suppressed fully doped mercury cadmium telluride (MCT) devices designed by Ashley and Elliott1 and grown by metalorganic vapor phase epitaxy (MOVPE) by Maxey et al.2 has been demonstrated. These devices also demonstrate efficient negative luminescent emission in the long wavelength infrared (LWIR) spectra.3 However, to operate a large area device (>1 cm2) requires a large current (∼10 A), and consequently, it is critical that the series resistance is minimized. To increase optical efficiency, deep optical concentrators are needed. Similar InSb molecular beam epitaxy (MBE) devices utilize a highly doped InSb substrate which allows a conduction path into the substrate with reduced series resistance and acts as an optical window (due to Moss-Burstein shift) allowing transmission of the 6 m IR emission. A suitable high conductivity substrate for MCT emitter devices is required to have a sheet resistivity of <1 /□. The conventional MCT epitaxy substrates are CdZnTe and GaAs. High conductivity cadmium zinc telluride (CZT) was not found to be commercially available. Although high conductivity, n-type GaAs is available, the maximum doping is limited by the degree of free carrier absorption in the LWIR which would reduce the potential emitter efficiency. This paper describes a novel investigation into achieving working LW emitter devices with deep mesas in which the current is carried by the GaAs substrate. The key issue which had to be addressed was obtaining conduction between the II/VI and III/V materials. A variety of interface designs was investigated but the best results were achieved by minimizing the band-gap of the interfacial II/VI MCT and optimizing the properties of the top region of the GaAs substrate.</description><subject>Applied sciences</subject><subject>Augers</subject><subject>Cadmium zinc tellurides</subject><subject>Devices</subject><subject>Electronics</subject><subject>Emission</subject><subject>Emitters</subject><subject>Epitaxial growth</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>Indium antimonide</subject><subject>Infrared spectra</subject><subject>Intermetallic compounds</subject><subject>Mercury cadmium telluride</subject><subject>Mercury cadmium tellurides</subject><subject>Mesas</subject><subject>Metalorganic chemical vapor deposition</subject><subject>Molecular beam epitaxy</subject><subject>Optoelectronic devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Substrates</subject><subject>Vapor phase epitaxy</subject><subject>Vapor phases</subject><subject>Zinc telluride</subject><subject>Zinc tellurides</subject><issn>0361-5235</issn><issn>0381-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>BENPR</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp1kE1LAzEQhoMoWKsXf0FQ8SCsJpvPHrXYVqh4qeBtSbOzdct2U5Nsi__elAqK4GlgeN6XmQehc0puKSHq7mFEcimFlvkB6lHBWUa1fDtEPcIkzUTOxDE6CWFJCBVU0x6ajL3bxnfsKty4doG3ZgMNtIu0qtvKGw8lfh7OMKzqGMEH7FpsXVt2NtYbwKGbh-hNhHCKjirTBDj7nn30OnqcDSfZ9GX8NLyfZpZxHjMNwnBJWC6skhoYURYEo1wLxQ1VpVSGQsmJHVRlqaykFecVg5LMB0rPU7CPrve9a-8-OgixWNXBQtOYFlwXilwqIdOfCbz8Ay5d59t0W2IklwMtGE_Uxb8U4YOdTZ2gmz1kvQvBQ1Wsfb0y_rOgpNh5L368J_jqu9EEa5rksLV1-JXgguacfQGoVX-O</recordid><startdate>20010601</startdate><enddate>20010601</enddate><creator>MAXEY, C. D</creator><creator>AHMED, M. U</creator><creator>JONES, C. L</creator><creator>CATCHPOLE, R. A</creator><creator>CAPPER, P</creator><creator>GORDON, N. T</creator><creator>HOULTON, M</creator><creator>ASHLEY, T</creator><general>Institute of Electrical and Electronics Engineers</general><general>Springer Nature B.V</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20010601</creationdate><title>Growth of long wavelength infrared MCT emitters on conductive substrates</title><author>MAXEY, C. D ; AHMED, M. U ; JONES, C. L ; CATCHPOLE, R. A ; CAPPER, P ; GORDON, N. T ; HOULTON, M ; ASHLEY, T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c344t-8e5a460325c768e307ce53148574a17d67a1ed40c9fdd7c61f44f3ed0b978b603</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Applied sciences</topic><topic>Augers</topic><topic>Cadmium zinc tellurides</topic><topic>Devices</topic><topic>Electronics</topic><topic>Emission</topic><topic>Emitters</topic><topic>Epitaxial growth</topic><topic>Exact sciences and technology</topic><topic>Gallium arsenide</topic><topic>Indium antimonide</topic><topic>Infrared spectra</topic><topic>Intermetallic compounds</topic><topic>Mercury cadmium telluride</topic><topic>Mercury cadmium tellurides</topic><topic>Mesas</topic><topic>Metalorganic chemical vapor deposition</topic><topic>Molecular beam epitaxy</topic><topic>Optoelectronic devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Substrates</topic><topic>Vapor phase epitaxy</topic><topic>Vapor phases</topic><topic>Zinc telluride</topic><topic>Zinc tellurides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>MAXEY, C. D</creatorcontrib><creatorcontrib>AHMED, M. U</creatorcontrib><creatorcontrib>JONES, C. L</creatorcontrib><creatorcontrib>CATCHPOLE, R. A</creatorcontrib><creatorcontrib>CAPPER, P</creatorcontrib><creatorcontrib>GORDON, N. T</creatorcontrib><creatorcontrib>HOULTON, M</creatorcontrib><creatorcontrib>ASHLEY, T</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>MAXEY, C. D</au><au>AHMED, M. U</au><au>JONES, C. L</au><au>CATCHPOLE, R. A</au><au>CAPPER, P</au><au>GORDON, N. T</au><au>HOULTON, M</au><au>ASHLEY, T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth of long wavelength infrared MCT emitters on conductive substrates</atitle><jtitle>Journal of electronic materials</jtitle><date>2001-06-01</date><risdate>2001</risdate><volume>30</volume><issue>6</issue><spage>723</spage><epage>728</epage><pages>723-728</pages><issn>0361-5235</issn><issn>0381-5235</issn><eissn>1543-186X</eissn><coden>JECMA5</coden><abstract>Uncooled operation of Auger suppressed fully doped mercury cadmium telluride (MCT) devices designed by Ashley and Elliott1 and grown by metalorganic vapor phase epitaxy (MOVPE) by Maxey et al.2 has been demonstrated. These devices also demonstrate efficient negative luminescent emission in the long wavelength infrared (LWIR) spectra.3 However, to operate a large area device (>1 cm2) requires a large current (∼10 A), and consequently, it is critical that the series resistance is minimized. To increase optical efficiency, deep optical concentrators are needed. Similar InSb molecular beam epitaxy (MBE) devices utilize a highly doped InSb substrate which allows a conduction path into the substrate with reduced series resistance and acts as an optical window (due to Moss-Burstein shift) allowing transmission of the 6 m IR emission. A suitable high conductivity substrate for MCT emitter devices is required to have a sheet resistivity of <1 /□. The conventional MCT epitaxy substrates are CdZnTe and GaAs. High conductivity cadmium zinc telluride (CZT) was not found to be commercially available. Although high conductivity, n-type GaAs is available, the maximum doping is limited by the degree of free carrier absorption in the LWIR which would reduce the potential emitter efficiency. This paper describes a novel investigation into achieving working LW emitter devices with deep mesas in which the current is carried by the GaAs substrate. The key issue which had to be addressed was obtaining conduction between the II/VI and III/V materials. A variety of interface designs was investigated but the best results were achieved by minimizing the band-gap of the interfacial II/VI MCT and optimizing the properties of the top region of the GaAs substrate.</abstract><cop>New York, NY</cop><pub>Institute of Electrical and Electronics Engineers</pub><doi>10.1007/BF02665862</doi><tpages>6</tpages></addata></record> |
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| subjects | Applied sciences Augers Cadmium zinc tellurides Devices Electronics Emission Emitters Epitaxial growth Exact sciences and technology Gallium arsenide Indium antimonide Infrared spectra Intermetallic compounds Mercury cadmium telluride Mercury cadmium tellurides Mesas Metalorganic chemical vapor deposition Molecular beam epitaxy Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Substrates Vapor phase epitaxy Vapor phases Zinc telluride Zinc tellurides |
| title | Growth of long wavelength infrared MCT emitters on conductive substrates |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T09%3A48%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Growth%20of%20long%20wavelength%20infrared%20MCT%20emitters%20on%20conductive%20substrates&rft.jtitle=Journal%20of%20electronic%20materials&rft.au=MAXEY,%20C.%20D&rft.date=2001-06-01&rft.volume=30&rft.issue=6&rft.spage=723&rft.epage=728&rft.pages=723-728&rft.issn=0361-5235&rft.eissn=1543-186X&rft.coden=JECMA5&rft_id=info:doi/10.1007/BF02665862&rft_dat=%3Cproquest_cross%3E2664698534%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=204902668&rft_id=info:pmid/&rfr_iscdi=true |