Effect of silicon nitride capping layer on via electromigration and failure criterion methodology in multilevel interconnection

Electromigration of via-terminated Al(Cu) stripes in two-level and four-level interconnect structures was studied. We found that the top-level metals adjacent to the dielectric capping layers exhibited the longest electromigration lifetimes and sustained the highest critical current densities. Compa...

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Veröffentlicht in:	Thin solid films 2001-10, Vol.397 (1), p.186-193
Hauptverfasser:	Huang, J.S, Deng, X.J, Yih, P.H, Shofner, T.L, Obeng, Y.S, Darling, C
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Applied sciences Electromigration Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Semiconductors Silicon nitride
Online-Zugang:	Volltext
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