Role of energetic flux in low temperature Si epitaxy on dihydride-terminated Si (001)

Epitaxial Si films were grown on the dihydride-terminated (1×1) Si (001) surface by pulsed laser deposition at substrate temperatures between 315 K and 625 K. Critical epitaxial thicknesses, measured by high-resolution cross-sectional transmission electron microscopy, were found to be smaller and to...

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Veröffentlicht in:	Thin solid films 1998-07, Vol.324 (1), p.85-88
Hauptverfasser:	Taylor, M.E, Atwater, Harry A, Murty, M.V.Ramana
Format:	Artikel
Sprache:	eng
Schlagworte:	Cross-disciplinary physics: materials science rheology Dihydride surface Energetic flux Epitaxial thicknesses Exact sciences and technology Laser deposition Materials science Methods of deposition of films and coatings film growth and epitaxy Physics
Online-Zugang:	Volltext
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